发明授权
- 专利标题: FIB milling of copper over organic dielectrics
- 专利标题(中): FIB在有机电介质上铣削铜
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申请号: US12239698申请日: 2008-09-26
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公开(公告)号: US07883630B2公开(公告)日: 2011-02-08
- 发明人: Vladimir V. Makarov , Theodore R. Lundquist
- 申请人: Vladimir V. Makarov , Theodore R. Lundquist
- 申请人地址: US CA Fremont
- 专利权人: DCG Systems, Inc.
- 当前专利权人: DCG Systems, Inc.
- 当前专利权人地址: US CA Fremont
- 代理机构: Nixon Peabody LLP.
- 代理商 Joseph Bach, Esq.
- 主分类号: H01L21/00
- IPC分类号: H01L21/00
摘要:
Apparatus and processes are disclosed for milling copper adjacent to organic low-k dielectric on a substrate by directing a charged-particle beam at a portion of the copper and exposing the copper to a precursor sufficient to enhance removal of the copper relative to removal of the dielectric, wherein the precursor contains an oxidizing agent, has a high sticking coefficient and a long residence time on the copper, contains atoms of at least one of carbon and silicon in amount sufficient to stop oxidation of the dielectric, and contains no atoms of chlorine, bromine or iodine. In one embodiment, the precursor comprises at least one of the group consisting of NitroEthanol, NitroEthane, NitroPropane, NitroMethane, compounds based on silazane such as HexaMethylCycloTriSilazane, and compounds based on siloxane such as Octa-Methyl-Cyclo-Tetra-Siloxane. Products of the processes are also disclosed.
公开/授权文献
- US20090114851A1 FIB MILLING OF COPPER OVER ORGANIC DIELECTRICS 公开/授权日:2009-05-07
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