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公开(公告)号：US07883630B2
公开(公告)日：2011-02-08
申请号：US12239698
申请日：2008-09-26
IPC分类号： H01L21/00
CPC分类号： C23F4/00 , H01J37/3053 , H01J2237/3114 , H01J2237/31744 , H01L21/32131
摘要： Apparatus and processes are disclosed for milling copper adjacent to organic low-k dielectric on a substrate by directing a charged-particle beam at a portion of the copper and exposing the copper to a precursor sufficient to enhance removal of the copper relative to removal of the dielectric, wherein the precursor contains an oxidizing agent, has a high sticking coefficient and a long residence time on the copper, contains atoms of at least one of carbon and silicon in amount sufficient to stop oxidation of the dielectric, and contains no atoms of chlorine, bromine or iodine. In one embodiment, the precursor comprises at least one of the group consisting of NitroEthanol, NitroEthane, NitroPropane, NitroMethane, compounds based on silazane such as HexaMethylCycloTriSilazane, and compounds based on siloxane such as Octa-Methyl-Cyclo-Tetra-Siloxane. Products of the processes are also disclosed.
摘要翻译： 公开了用于通过在铜的一部分处引导带电粒子束并将铜暴露于足以增强铜相对于去除铜的前体的前体来研磨邻近有机低k电介质的铜的装置和方法 电介质，其中所述前体含有氧化剂，在铜上具有高粘附系数和长停留时间，含有足以阻止电介质氧化的碳和硅中的至少一种的原子，并且不含有氯原子 ，溴或碘。 在一个实施方案中，前体包括硝基乙醇，硝基乙烷，硝基丙烷，硝基甲烷，基于硅氮烷的化合物如六甲基环己基硅氮烷和基于硅氧烷的化合物如八甲基环四硅氧烷中的至少一种。 还公开了该方法的产品。
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公开(公告)号：US20090114851A1
公开(公告)日：2009-05-07
申请号：US12239698
申请日：2008-09-26
IPC分类号： H01J37/305
CPC分类号： C23F4/00 , H01J37/3053 , H01J2237/3114 , H01J2237/31744 , H01L21/32131
摘要： Apparatus and processes are disclosed for milling copper adjacent to organic low-k dielectric on a substrate by directing a charged-particle beam at a portion of the copper and exposing the copper to a precursor sufficient to enhance removal of the copper relative to removal of the dielectric, wherein the precursor contains an oxidizing agent, has a high sticking coefficient and a long residence time on the copper, contains atoms of at least one of carbon and silicon in amount sufficient to stop oxidation of the dielectric, and contains no atoms of chlorine, bromine or iodine. In one embodiment, the precursor comprises at least one of the group consisting of NitroEthanol, NitroEthane, NitroPropane, NitroMethane, compounds based on silazane such as HexaMethylCycloTriSilazane, and compounds based on siloxane such as Octa-Methyl-Cyclo-Tetra-Siloxane. Products of the processes are also disclosed.
摘要翻译： 公开了用于通过在铜的一部分处引导带电粒子束并将铜暴露于足以增强铜相对于去除铜的前体的前体来研磨邻近有机低k电介质的铜的装置和方法 电介质，其中所述前体含有氧化剂，在铜上具有高粘附系数和长停留时间，含有足以阻止电介质氧化的碳和硅中的至少一种的原子，并且不含有氯原子 ，溴或碘。 在一个实施方案中，前体包括硝基乙醇，硝基乙烷，硝基丙烷，硝基甲烷，基于硅氮烷的化合物如六甲基环己基硅氮烷和基于硅氧烷的化合物如八甲基环四硅氧烷中的至少一种。 还公开了该方法的产品。
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公开(公告)号：US07060196B2
公开(公告)日：2006-06-13
申请号：US10678438
申请日：2003-10-03
CPC分类号： C23F4/00 , H01J37/3053 , H01J2237/3114 , H01J2237/31744 , H01L21/32131
摘要： Apparatus and processes are disclosed for milling copper adjacent to organic low-k dielectric on a substrate by directing a charged-particle beam at a portion of the copper and exposing the copper to a precursor sufficient to enhance removal of the copper relative to removal of the dielectric, wherein the precursor contains an oxidizing agent, has a high sticking coefficient and a long residence time on the copper, contains atoms of at least one of carbon and silicon in amount sufficient to stop oxidation of the dielectric, and contains no atoms of chlorine, bromine or iodine. In one embodiment, the precursor comprises at least one of the group consisting of NitroEthanol, NitroEthane, NitroPropane, NitroMethane, compounds based on silazane such as HexaMethylCycloTriSilazane, and compounds based on siloxane such as Octa-Methyl-Cyclo-Tetra-Siloxane. Products of the processes are also disclosed.
摘要翻译： 公开了用于通过在铜的一部分处引导带电粒子束并将铜暴露于足以增强铜相对于去除铜的前体的前体来研磨邻近有机低k电介质的铜的装置和方法 电介质，其中所述前体含有氧化剂，在铜上具有高粘附系数和长停留时间，含有足以阻止电介质氧化的碳和硅中的至少一种的原子，并且不含有氯原子 ，溴或碘。 在一个实施方案中，前体包括硝基乙醇，硝基乙烷，硝基丙烷，硝基甲烷，基于硅氮烷的化合物如六甲基环己基硅氮烷和基于硅氧烷的化合物如八甲基环四硅氧烷中的至少一种。 还公开了该方法的产品。
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公开(公告)号：US07530034B2
公开(公告)日：2009-05-05
申请号：US11363787
申请日：2006-02-27
申请人： Martin Betz , Lokesh Johri , Rajesh Jain , Theodore R. Lundquist , Tamal Basu , Saurabh Gupta , Jagadish Narayana Gade
发明人： Martin Betz , Lokesh Johri , Rajesh Jain , Theodore R. Lundquist , Tamal Basu , Saurabh Gupta , Jagadish Narayana Gade
IPC分类号： G06F17/50
CPC分类号： G06F17/5068
摘要： A method and apparatus for defining a circuit operation, such as a charged particle beam operation to perform a circuit edit and define a probe point. Circuit operation definition is performed in a front-end environment with access to integrated circuit computer aided design tools providing logic level and layout level information concerning the integrated circuit. The front-end environment incorporates circuit operation optimization methods to identify optimal locations for a circuit operation. A back-end environment, such as a charged particle tool computing platform, is adapted to receive one or more files, which may include a truncated layout file with circuit operation location information, for use in further defining a circuit operation and/or performing the circuit operation.
摘要翻译： 一种用于定义电路操作的方法和装置，例如带电粒子束操作以执行电路编辑并定义探测点。 电路操作定义在前端环境中执行，可访问集成电路计算机辅助设计工具，提供有关集成电路的逻辑电平和布局级信息。 前端环境包含电路操作优化方法，以确定电路操作的最佳位置。 诸如带电粒子工具计算平台的后端环境适于接收一个或多个文件，其可以包括具有电路操作位置信息的截断的布局文件，以用于进一步定义电路操作和/或执行 电路操作。
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公开(公告)号：US07115426B2
公开(公告)日：2006-10-03
申请号：US11031423
申请日：2005-01-07
申请人： Erwan Le Roy , Patricia Le Coupanec , Theodore R. Lundquist , William B. Thompson , Mark A. Thompson , Lokesh Johri
发明人： Erwan Le Roy , Patricia Le Coupanec , Theodore R. Lundquist , William B. Thompson , Mark A. Thompson , Lokesh Johri
IPC分类号： H01L21/66
CPC分类号： H01L22/12
摘要： A method for utilizing interference fringe patterns generated when milling a trench through a semiconductor substrate by a method such as FIB milling, to determine and optimize the thickness uniformity of the trench bottom. The interference fringes may be mapped and the mapping used to direct the FIB milling to those regions which are thicker to correct observed non-uniformities in the trench floor thickness by varying the pixel dwell time across the milled area. The interference fringe mapping may be used to develop computerized contour lines to automate the pixel dwell time variations as described above, for correcting non-uniformities in the trench floor thickness. The method may be applied to applications other than trench formation for backside editing, such as monitoring progress in forming a milled object.
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公开(公告)号：US07786436B1
公开(公告)日：2010-08-31
申请号：US12005086
申请日：2007-12-21
IPC分类号： G01R31/304
CPC分类号： G01R31/307 , G01R31/2853 , H01L22/12
摘要： An improved method, apparatus, and control/guiding software for localizing, characterizing, and correcting defects in integrated circuits, particularly open or resistive contact/via defects and metal bridging defects, using FIB technology. An apparatus for identifying an abnormal discontinuity in a contact/via in an integrated circuit comprising a focused ion beam system to scan the ion beam over the contact/via to do remove or deposit via material, a detector to collect a secondary particle signal from the contact/via material that gets removed, a sub-system for storing the secondary particle signal from the contact/via in time as well as x-y scan position, a sub-system for correlating secondary particle signals and identifying discontinuities in the correlated secondary particle signals, a sub-system for optimizing the display of the abnormal discontinuity; and a computer to implement software aspects of the system.
摘要翻译： 一种改进的方法，装置和控制/指导软件，用于使用FIB技术来定位，表征和校正集成电路中的缺陷，特别是开路或电阻性接触/通孔缺陷和金属桥接缺陷。 一种用于识别集成电路中的接触/通孔中的异常不连续性的装置，包括：聚焦离子束系统，用于扫描接触/通孔上的离子束，以去除或沉积经由材料;检测器，用于从 接触/通过材料，用于在接触/通过时间以及xy扫描位置存储二次粒子信号的子系统，用于关联二次粒子信号和识别相关次级粒子信号中的不连续性的子系统 ，用于优化异常不连续显示的子系统; 和计算机来实现系统的软件方面。
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公开(公告)号：US07409653B2
公开(公告)日：2008-08-05
申请号：US10946667
申请日：2004-09-21
CPC分类号： G06K9/32 , G06T7/001 , G06T7/32 , G06T2207/30148
摘要： A plurality of images, including a first image and a second image having a higher resolution than the first image, are aligned by generating an oversampled cross correlation image that corresponds to relative displacements of the first and second images, and, based on the oversampled cross correlation image, determining an offset value that corresponds to a misalignment of the first and second images. The first and second images are aligned to a precision greater than the resolution of the first image, based on the determined offset value. Enhanced results are achieved by performing another iteration of generating an oversampled cross correlation image and determining an offset value for the first and second images. Generating the oversampled cross correlation image may involve generating a cross correlation image that corresponds to relative displacements of the first and second images, and oversampling the cross correlation image to generate the oversampled cross correlation image.
摘要翻译： 通过产生对应于第一和第二图像的相对位移的过采样互相关图像，并且基于过采样交叉，对准包括具有比第一图像更高分辨率的第一图像和第二图像的多个图像 相关图像，确定对应于第一和第二图像的未对准的偏移值。 基于所确定的偏移值，将第一和第二图像对准到大于第一图像的分辨率的精度。 通过执行产生过采样互相关图像的另一次迭代并确定第一和第二图像的偏移值来实现增强的结果。 产生过采样互相关图像可以涉及产生对应于第一和第二图像的相对位移的互相关图像，并且对互相关图像进行过采样以生成过采样互相关图像。
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公开(公告)号：US06943572B2
公开(公告)日：2005-09-13
申请号：US10728522
申请日：2003-12-05
IPC分类号： G01R31/26 , G01R31/28 , G01R31/302 , G01R31/311
CPC分类号： G01R31/311 , G01R31/2621 , G01R31/2846
摘要： A system, apparatus, and method for analyzing photon emission data to discriminate between photons emitted by transistors and photons emitted by background sources. The analysis involves processing of integrated circuit computer aided design data to identify transistors within the CAD data. The analysis may further involve the use of Boolean operators to process the CAD data to particularly identify, such as through a channel, the location of the NMOS and PMOS gates, the location of the drain and source, or some combination of the location of the gate and drain or source to particularly identify the pinch-off region.
摘要翻译： 用于分析光子发射数据以鉴别由晶体管发射的光子和由背景源发射的光子的系统，装置和方法。 分析涉及集成电路计算机辅助设计数据的处理，以识别CAD数据内的晶体管。 该分析还可以涉及使用布尔运算符来处理CAD数据，以特别地识别，例如通过通道，NMOS和PMOS门的位置，漏极和源的位置，或者位置的某种组合 栅极和漏极或源极以特别识别夹断区域。
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公开(公告)号：US06905623B2
公开(公告)日：2005-06-14
申请号：US10288896
申请日：2002-11-06
IPC分类号： H01J37/304 , H01J37/305 , C03C25/68
CPC分类号： H01J37/304 , H01J37/3056
摘要： A system and method for determining precisely in-situ the endpoint of halogen-assisted charged particle beam milling of a hole or trench in the backside of the substrate of a flipchip packaged IC. The backside of the IC is mechanically thinned. Optionally, a coarse trench is then milled in the thinned backside of the IC using either laser chemical etching or halogen-assisted charged particle beam milling. A further small trench is milled using a halogen-assisted charged-particle beam (electron or ion beam). The endpoint for milling this small trench is determined precisely by monitoring the power supply leakage current of the IC induced by electron-hole pairs created by the milling process. A precise in-situ endpoint detection signal is generated by modulating the beam at a reference frequency and then amplifying that frequency component in the power supply leakage current with an amplifier, narrow-band amplifier or lock-in amplifier. The precise, in-situ, endpoint signal is processed and displayed for manual or automatic precise in-situ endpoint detection. This approach avoids or minimizes unintentional damage or perturbation of the active diffusion regions in the IC. A range of further operations on the IC can then be performed.
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公开(公告)号：US07400154B2
公开(公告)日：2008-07-15
申请号：US11070968
申请日：2005-03-02
IPC分类号： G01R31/302
CPC分类号： G01R31/311 , G01R31/2621 , G01R31/2846
摘要： A system, apparatus, and method for analyzing photon emission data to discriminate between photons emitted by transistors and photons emitted by background sources. The analysis involves spatial and/or temporal correlation of photon emissions. After correlation, the analysis may further involve obtaining a likelihood that the correlated photons were emitted by a transistor. After correlation, the analysis may also further involve assigning a weight to individual photon emissions as a function of the correlation. The weight, in some instances, reflecting a likelihood that the photons were emitted by a transistor. The analysis may further involve automatically identifying transistors in a photon emission image.
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