Invention Grant
- Patent Title: Integration of capacitive elements in the form of perovskite ceramic
- Patent Title (中): 以钙钛矿陶瓷的形式集成电容元件
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Application No.: US12716289Application Date: 2010-03-03
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Publication No.: US07883906B2Publication Date: 2011-02-08
- Inventor: Ludovic Goux , Monique Gervais
- Applicant: Ludovic Goux , Monique Gervais
- Applicant Address: FR Montrouge FR Tours Cedex
- Assignee: STMicroelectronics S.A.,Universite Francois Rabelais
- Current Assignee: STMicroelectronics S.A.,Universite Francois Rabelais
- Current Assignee Address: FR Montrouge FR Tours Cedex
- Agency: Wolf, Greenfield & Sacks, P.C.
- Agent Lisa K. Jorgenson; James H. Morris
- Priority: FR0551008 20050420
- Main IPC: H01L29/72
- IPC: H01L29/72
Abstract:
The use of a conductive bidimensional perovskite as an interface between a silicon, metal, or amorphous oxide substrate and an insulating perovskite deposited by epitaxy, as well as an integrated circuit and its manufacturing process comprising a layer of an insulating perovskite deposited by epitaxy to form the dielectric of capacitive elements having at least an electrode formed of a conductive bidimensional perovskite forming an interface between said dielectric and an underlying silicon, metal, or amorphous oxide substrate.
Public/Granted literature
- US20100159666A1 INTEGRATION OF CAPACITIVE ELEMENTS IN THE FORM OF PEROVSKITE CERAMIC Public/Granted day:2010-06-24
Information query
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