公开(公告)号：US07700981B2

公开(公告)日：2010-04-20

申请号：US11407681

申请日：2006-04-20

Applicant: Ludovic Goux ,  Monique Gervais

Inventor： Ludovic Goux ,  Monique Gervais

IPC: H01L29/76

CPC classification number: H01L28/55 ,  H01L28/60

Abstract: The use of a conductive bidimensional perovskite as an interface between a silicon, metal, or amorphous oxide substrate and an insulating perovskite deposited by epitaxy, as well as an integrated circuit and its manufacturing process comprising a layer of an insulating perovskite deposited by epitaxy to form the dielectric of capacitive elements having at least an electrode formed of a conductive bidimensional perovskite forming an interface between said dielectric and an underlying silicon, metal, or amorphous oxide substrate.

Abstract translation: 使用导电二维钙钛矿作为硅，金属或非晶氧化物衬底之间的界面和通过外延沉积的绝缘钙钛矿，以及集成电路及其制造方法，其包括通过外延沉积的绝缘钙钛矿层以形成 电容元件的电介质至少具有由导电二维钙钛矿形成的电极，其形成在所述电介质和下面的硅，金属或非晶氧化物衬底之间的界面。