发明授权
US07884025B2 Plasma process uniformity across a wafer by apportioning ground return path impedances among plural VHF sources
失效
通过在多个VHF源之间分配接地返回路径阻抗,在晶片上的等离子体工艺均匀性
- 专利标题: Plasma process uniformity across a wafer by apportioning ground return path impedances among plural VHF sources
- 专利标题(中): 通过在多个VHF源之间分配接地返回路径阻抗,在晶片上的等离子体工艺均匀性
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申请号: US11733767申请日: 2007-04-11
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公开(公告)号: US07884025B2公开(公告)日: 2011-02-08
- 发明人: Kenneth S. Collins , Hiroji Hanawa , Kartik Ramaswamy , Douglas A. Buchberger, Jr. , Shahid Rauf , Kallol Bera , Lawrence Wong , Walter R. Merry , Matthew L. Miller , Steven C. Shannon , Andrew Nguyen , James P. Cruse , James Carducci , Troy S. Detrick , Subhash Deshmukh , Jennifer Y. Sun
- 申请人: Kenneth S. Collins , Hiroji Hanawa , Kartik Ramaswamy , Douglas A. Buchberger, Jr. , Shahid Rauf , Kallol Bera , Lawrence Wong , Walter R. Merry , Matthew L. Miller , Steven C. Shannon , Andrew Nguyen , James P. Cruse , James Carducci , Troy S. Detrick , Subhash Deshmukh , Jennifer Y. Sun
- 申请人地址: US CA Santa Clara
- 专利权人: Applied Materials, Inc.
- 当前专利权人: Applied Materials, Inc.
- 当前专利权人地址: US CA Santa Clara
- 代理机构: Law Office of Robert M. Wallace
- 主分类号: H01L21/302
- IPC分类号: H01L21/302
摘要:
In a plasma reactor chamber a ceiling electrode and a workpiece support electrode, respective RF power sources of respective VHF frequencies f1 and f2 are coupled to either respective ones of the electrodes or to a common one of the electrodes, where f1 is sufficiently high to produce a center-high non-uniform plasma ion distribution and f2 is sufficiently low to produce a center-low non-uniform plasma ion distribution. Respective center ground return paths are provided for RF current passing directly between the ceiling electrode and the workpiece support electrode for the frequencies f1 and f2, and an edge ground return path is provided for each of the frequencies f1 and f2. The impedance of at least one of the ground return paths is adjusted so as to control the uniformity of the plasma ion density distribution.
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