Invention Grant
US07888221B2 Tunneling field effect transistor using angled implants for forming asymmetric source/drain regions
有权
隧道场效应晶体管使用成角度的植入物形成不对称的源极/漏极区域
- Patent Title: Tunneling field effect transistor using angled implants for forming asymmetric source/drain regions
- Patent Title (中): 隧道场效应晶体管使用成角度的植入物形成不对称的源极/漏极区域
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Application No.: US12229459Application Date: 2008-08-22
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Publication No.: US07888221B2Publication Date: 2011-02-15
- Inventor: Jack T. Kavalieros , Matthew V. Metz , Gilbert Dewey , Been-Yih Jin , Justin K. Brask , Suman Datta , Robert S. Chau
- Applicant: Jack T. Kavalieros , Matthew V. Metz , Gilbert Dewey , Been-Yih Jin , Justin K. Brask , Suman Datta , Robert S. Chau
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Blakely, Sokoloff, Taylor & Zafman LLP
- Main IPC: H01L21/336
- IPC: H01L21/336
Abstract:
The present invention relates to a Tunnel Field Effect Transistor (TFET), which utilizes angle implantation and amorphization to form asymmetric source and drain regions. The TFET further includes a silicon germanium alloy epitaxial source region with a conductivity opposite that of the drain.
Public/Granted literature
- US20080318385A1 Tunneling field effect transistor using angled implants for forming asymmetric source/drain regions Public/Granted day:2008-12-25
Information query
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