Invention Grant
US07888240B2 Method of forming phase change memory devices in a pulsed DC deposition chamber
有权
在脉冲DC沉积室中形成相变存储器件的方法
- Patent Title: Method of forming phase change memory devices in a pulsed DC deposition chamber
- Patent Title (中): 在脉冲DC沉积室中形成相变存储器件的方法
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Application No.: US11974168Application Date: 2007-10-10
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Publication No.: US07888240B2Publication Date: 2011-02-15
- Inventor: Roger Hamamjy , Kuo-Wei Chang , Sean Jong Lee , Chong W. Lim
- Applicant: Roger Hamamjy , Kuo-Wei Chang , Sean Jong Lee , Chong W. Lim
- Applicant Address: IT Agrate Brianza
- Assignee: STMicroelectronics S.R.L.
- Current Assignee: STMicroelectronics S.R.L.
- Current Assignee Address: IT Agrate Brianza
- Agency: Seed IP Law Group PLLC
- Agent Lisa K. Jorgenson; Karl L. Klassen
- Priority: EP06425696 20061010
- Main IPC: H01L21/326
- IPC: H01L21/326
Abstract:
A phase change memory including an ovonic threshold switch is formed using a pulsed direct current (DC) deposition chamber using pulsed DC. Pulsed DC is used to deposit a chalcogenide film. Pulsed DC may be also used to deposit a carbon film.
Public/Granted literature
- US20080102560A1 Method of forming phase change memory devices in a pulsed DC deposition chamber Public/Granted day:2008-05-01
Information query
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