摘要:
A phase-change memory cell having a reduced electrode-chalcogenide interface resistance and a method for making the phase-change memory cell are disclosed: An interface layer is formed between an electrode layer and a chalcogenide layer that and provides a reduced resistance between the chalcogenide-based phase-change memory layer and the electrode layer. Exemplary embodiments provide that the interface layer comprises a tungsten carbide, a molybdenum carbide, a tungsten boride, or a molybdenum boride, or a combination thereof. In one exemplary embodiment, the interface layer comprises a thickness of between about 1 nm and about 10 nm.
摘要:
A memory may include two electrodes and phase change material having an amorphous reset state and a partially crystalized set state, coupled between the two electrodes. The phase change material in the set state may have a highly nonlinear current-voltage response in a subthreshold voltage region. The phase change material may be an alloy of indium, antimony, and tellurium.
摘要:
The invention relates to systems and methods for treating a fungal infection of the nail of an individual. In various embodiments, the methods include applying a device to at least one nail of the individual that is infected by a fungus. In various embodiments, the devices include at least one active electrode and at least one counter electrode, with the at least one counter electrode in contact with the individual.
摘要:
By making an ovonic threshold switch using a carbon interfacial layer having a thickness of less than or equal to ten percent of the thickness of the associated electrode, cycle endurance may be improved. In some embodiments, a glue layer may be used between the carbon and the chalcogenide of the ovonic threshold switch. The glue layer may be effective to improve adherence between carbon and chalcogenide.
摘要:
A phase change memory including an ovonic threshold switch is formed using a pulsed direct current (DC) deposition chamber using pulsed DC. Pulsed DC is used to deposit a chalcogenide film. Pulsed DC may be also used to deposit a carbon film.
摘要:
Radio frequency sputtering of high resistance films may be achieved in a cluster tool. Suitable radio frequency isolation may be utilized to enable RF sputtering in an environment which may sensitive to radio frequency energy.
摘要:
A computerized numerical control system is provided for controlling a servomechanism under the direction of a general-purpose computer system. The system implements in software a PID controller for determining appropriate inputs to the servomechanism. The system further includes a Field Programmable Gate Array which is loadable with custom logic for remotely interfacing to the servomechanism.
摘要:
An electrokinetic system for delivering a substance into tissue includes an alternating current source of a predetermined frequency. A first electrode is coupled to a first terminal of the alternating current source and a second electrode is coupled to a second terminal of the alternating current source. A rectifying circuit is coupled between the first electrode and the first terminal of the alternating current source. One of the first and second electrodes is adapted for electrical contact with a substance-delivery site. A current rectified by the rectifying circuit flows in a current path between the first and second electrodes when the one of the first and second electrodes is in electrical contact with the substance-delivery site to effect delivery of the substance into the tissue.
摘要:
A computer-based method for controlling lighting patterns of an LED is disclosed. The method includes the steps of: adding LED data to a computer, the LED data includes a lighting pattern of the LED; sending a command to an LED controller connected to the LED, the command is a control command or a writing command, the writing command includes LED data that can be read by the computer; updating LED data stored in the LED controller with the LED data included in the writing command if the command is the writing command, and controlling the lighting pattern of the LED according to the updated LED data; reading LED data from the LED controller directly if the command is the control command, and controlling the LED to turn on or turn off according to the LED data read from the LED controller. A related system is also disclosed.
摘要:
A phase change memory including an ovonic threshold switch may be formed with reduced argon in the ovonic threshold switch. The presence of argon adversely impacts the performance of the ovonic threshold switch. Argon concentration can be reduced by depositing the phase change material for the ovonic threshold switch in a relatively low pressure argon environment to enable the argon pressure within said chamber to be reduced.