Invention Grant
- Patent Title: Ion source cleaning method and apparatus
- Patent Title (中): 离子源清洗方法及装置
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Application No.: US12143247Application Date: 2008-06-20
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Publication No.: US07888662B2Publication Date: 2011-02-15
- Inventor: Costel Biloiu , Craig R. Chaney , Eric R. Cobb , Bon-Woong Koo , Wilhelm P. Platow
- Applicant: Costel Biloiu , Craig R. Chaney , Eric R. Cobb , Bon-Woong Koo , Wilhelm P. Platow
- Applicant Address: US MA Gloucester
- Assignee: Varian Semiconductor Equipment Associates, Inc.
- Current Assignee: Varian Semiconductor Equipment Associates, Inc.
- Current Assignee Address: US MA Gloucester
- Main IPC: H01J37/08
- IPC: H01J37/08

Abstract:
In a cleaning process for an ion source chamber, an electrode positioned outside of the ion source chamber includes a suppression plug. When the cleaning gas is introduced intothe source chamber, the suppression plug may engage an extraction aperture of the source chamber to adjust the gas pressure within the chamber to enhance chamber cleaning via. plasma-enhanced chemical reaction. The gas conductance between the source chamber aperture and the suppression plug can be adjusted during the cleaning process to provide optimum cleaning conditions and to exhaust unwanted deposits.
Public/Granted literature
- US20090314951A1 ION SOURCE CLEANING METHOD AND APPARATUS Public/Granted day:2009-12-24
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