发明授权
- 专利标题: Method for manufacturing over-current protection device
- 专利标题(中): 制造过流保护装置的方法
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申请号: US12041322申请日: 2008-03-03
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公开(公告)号: US07892392B2公开(公告)日: 2011-02-22
- 发明人: David Shau Chew Wang , Jyh Ming Yu
- 申请人: David Shau Chew Wang , Jyh Ming Yu
- 申请人地址: TW Hsinchu
- 专利权人: Polytronics Technology Corporation
- 当前专利权人: Polytronics Technology Corporation
- 当前专利权人地址: TW Hsinchu
- 代理机构: Connolly Bove Lodge & Hutz LLP
- 优先权: TW96118270A 20070523
- 主分类号: B29C65/00
- IPC分类号: B29C65/00 ; B29C65/02 ; B29C65/18 ; B32B37/04 ; B32B37/06 ; B32B37/16 ; B32B38/00 ; B32B38/04 ; H02H5/04
摘要:
A method for manufacturing an over-current protection device comprises a step of providing at least one current sensitive device and a step of pressing. The current sensitive device comprises a first electrode foil, a second electrode foil and a PTC conductive layer physically laminated between the first and second electrode foils. The pressing step is to press the current sensitive device at a predetermined temperature, thereby generating at least one overflow portion at sides of the PTC conductive layer to form the over-current protection device. The predetermined temperature is higher than the softening temperature of the PTC conductive layer. The over-current protection devices manufactured according to the present invention have superior resistance distribution.
公开/授权文献
- US20080289751A1 METHOD FOR MANUFACTURING OVER-CURRENT PROTECTION DEVICE 公开/授权日:2008-11-27
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