发明授权
- 专利标题： Photonic crystal EUV photoresists
- 专利标题（中）： 光子晶体EUV光致抗蚀剂
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申请号： US11592623申请日： 2006-11-03
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公开(公告)号： US07892719B2公开(公告)日： 2011-02-22
- 发明人: Eric C. Hannah
- 申请人： Eric C. Hannah
- 申请人地址： US CA Santa Clara
- 专利权人： Intel Corporation
- 当前专利权人： Intel Corporation
- 当前专利权人地址： US CA Santa Clara
- 代理商 Julia A. Hodge
- 主分类号： G03C1/795
- IPC分类号： G03C1/795 ; G03F7/09 ; G03F7/20 ; G03F7/30
摘要：
Embodiments of the present invention provide EUV (extreme ultraviolet) photoresists comprising photonic crystals, as well as other components. Photonic crystals in general provide the ability not only to block light transmission, but also to create resonant pockets in which light can propagate. The photonic crystals are based on bio-related polymers that are capable of self-assembly into crystalline form.
公开/授权文献
- US20080107994A1 Photonic crystal EUV photoresists 公开/授权日：2008-05-08
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