发明授权
- 专利标题: Method for fabricating a compound-material wafer
- 专利标题(中): 复合材料晶圆的制造方法
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申请号: US11472745申请日: 2006-06-21
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公开(公告)号: US07892861B2公开(公告)日: 2011-02-22
- 发明人: Ludovic Ecarnot , Willy Michel , Patrick Reynaud , Walter Schwarzenbach
- 申请人: Ludovic Ecarnot , Willy Michel , Patrick Reynaud , Walter Schwarzenbach
- 申请人地址: FR Bernin
- 专利权人: S.O.I.Tec Silicon on Insulator Technologies
- 当前专利权人: S.O.I.Tec Silicon on Insulator Technologies
- 当前专利权人地址: FR Bernin
- 代理机构: Winston & Strawn LLP
- 优先权: EP06290542 20060331
- 主分类号: H01L21/66
- IPC分类号: H01L21/66
摘要:
The present invention provides improved methods for fabricating compound-material wafers, in particular a silicon on insulator type wafer. The improved methods lead to reduced numbers of deflects arising on or near the periphery of the wafers. In a first method, wafers are selected in dependence on edge roll off values determined at about 0.5-2.5 mm away from the edge of the wafer, where edge roll off values are determined in dependence on the second derivative of the wafer height profiles. In a second method, wafers selected according to the first method are further processed by bonding, forming a splitting layer, and detaching the two wafers at the splitting layer.