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发明授权
US07892952B2 Laser apparatus, laser irradiation method, manufacturing method for semiconductor device, semiconductor device, production system for semiconductor device using the laser apparatus, and electronic equipment 有权
激光装置，激光照射方法，半导体装置的制造方法，半导体装置，使用该激光装置的半导体装置的制造系统以及电子设备

Laser apparatus, laser irradiation method, manufacturing method for semiconductor device, semiconductor device, production system for semiconductor device using the laser apparatus, and electronic equipment
摘要：
Provided are a laser apparatus of continuous oscillation that is capable of enhancing the efficiency of substrate processing, a laser irradiation method, and a manufacturing method for a semiconductor device using the laser apparatus. A portion of a semiconductor film that should be left on a substrate after patterning is grasped in accordance with a mask. Then, a portion to be scanned with a laser light is determined so that it is possible to crystallize at least the portion to be obtained through the patterning. Also, a beam spot is made to strike the portion to be scanned. As a result, the semiconductor film is partially crystallized. That is, with the present invention, the laser light is not scanned and irradiated onto the entire surface of a semiconductor film but is scanned so that at least an indispensable portion is crystallized. With the construction described above, it becomes possible to save a time taken to irradiate the laser light onto a portion that will be removed through the patterning after the crystallization of the semiconductor film.
摘要（中）：

提供能够提高基板处理效率的连续振荡的激光装置，激光照射方法以及使用该激光装置的半导体装置的制造方法。 根据掩模掌握在图案化之后留在基板上的半导体膜的一部分。 然后，确定要用激光扫描的部分，使得可以通过图案化至少使待获得的部分结晶。 此外，使光束点撞击要扫描的部分。 结果，半导体膜部分结晶。 也就是说，利用本发明，激光不被扫描并照射到半导体膜的整个表面上，而是被扫描，使得至少不可缺少的部分结晶化。 利用上述结构，可以将半导体膜结晶后的激光照射到通过图案化去除的部分上所花费的时间。

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