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发明授权
US07893348B2 Nanowires in thin-film silicon solar cells 有权
纳米线在薄膜硅太阳能电池中的应用

Nanowires in thin-film silicon solar cells
摘要：
In some embodiments, the present invention is directed to photovoltaic (PV) devices comprising silicon (Si) nanowires as active PV elements, wherein such devices are typically thin film Si solar cells. Generally, such solar cells are of the p-i-n type and can be fabricated for front and/or backside (i.e., top and/or bottom) illumination. Additionally, the present invention is also directed at methods of making and using such devices, and to systems and modules (e.g., solar panels) employing such devices.
摘要（中）：

在一些实施例中，本发明涉及包含硅（Si）纳米线作为有源PV元件的光伏（PV）器件，其中这种器件通常是薄膜Si太阳能电池。 通常，这种太阳能电池是p-i-n型，并且可以制造用于正面和/或背面（即，顶部和/或底部）照明。 此外，本发明还涉及制造和使用这种装置以及采用这种装置的系统和模块（例如，太阳能电池板）的方法。

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