发明授权
- 专利标题： High throughput die-to-wafer bonding using pre-alignment
- 专利标题（中）： 使用预对准的高通量晶片到晶片键合
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申请号： US12329304申请日： 2008-12-05
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公开(公告)号： US07897481B2公开(公告)日： 2011-03-01
- 发明人: Wen-Chih Chiou , Weng-Jin Wu , Chen-Hua Yu
- 申请人： Wen-Chih Chiou , Weng-Jin Wu , Chen-Hua Yu
- 申请人地址： TW Hsin-Chu
- 专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址： TW Hsin-Chu
- 代理机构： Slater & Matsil, L.L.P.
- 主分类号： H01L21/98
- IPC分类号： H01L21/98
摘要：
A method of forming integrated circuits includes providing a wafer that includes a plurality of dies; aligning a first top die to a first bottom die in the wafer; recording a first destination position of the first top die after the first top die is aligned to the first bottom die; bonding the first top die onto the first bottom die; calculating a second destination position of a second top die using the first destination position; moving the second top die to the second destination position; and bonding the second top die onto a second bottom die without any additional alignment action.
公开/授权文献
- US20100144068A1 High Throughput Die-to-Wafer Bonding Using Pre-Alignment 公开/授权日：2010-06-10
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