发明授权
- 专利标题： Lateral bipolar junction transistor with reduced base resistance
- 专利标题（中）： 具有降低的基极电阻的横向双极结晶体管
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申请号： US12420046申请日： 2009-04-07
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公开(公告)号： US07897995B2公开(公告)日： 2011-03-01
- 发明人: Ming-Tzong Yang , Tao Cheng , Ching-Chung Ko , Tung-Hsing Lee
- 申请人： Ming-Tzong Yang , Tao Cheng , Ching-Chung Ko , Tung-Hsing Lee
- 申请人地址： TW Science-Based Industrial Park, Hsin-Chu
- 专利权人： Mediatek Inc.
- 当前专利权人： Mediatek Inc.
- 当前专利权人地址： TW Science-Based Industrial Park, Hsin-Chu
- 代理商 Winston Hsu; Scott Margo
- 主分类号： H01L29/735
- IPC分类号： H01L29/735
摘要：
A lateral bipolar junction transistor formed in a semiconductor substrate includes an emitter region; a base region surrounding the emitter region; a gate disposed at least over a portion of the base region; a collector region having at least one open side and being disposed about a periphery of the base region; a shallow trench isolation (STI) region disposed about a periphery of the collector region; a base contact region disposed about a periphery of the STI region; and an extension region merging with the base contact region and laterally extending to the gate on the open side of the collector region.
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