发明授权
- 专利标题: Memory including bipolar junction transistor select devices
- 专利标题(中): 存储器包括双极结型晶体管选择器件
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申请号: US11788909申请日: 2007-04-23
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公开(公告)号: US07898848B2公开(公告)日: 2011-03-01
- 发明人: Agostino Pirovano , Fabio Pellizzer
- 申请人: Agostino Pirovano , Fabio Pellizzer
- 申请人地址: US CA Santa Clara
- 专利权人: Intel Corporation
- 当前专利权人: Intel Corporation
- 当前专利权人地址: US CA Santa Clara
- 代理机构: Trop, Prunner & Hu, P.C.
- 主分类号: G11C11/00
- IPC分类号: G11C11/00
摘要:
An array is formed by a plurality of cells, wherein each cell is formed by a bipolar junction selection transistor having a first, a second, and a control region. The cell includes a common region, forming the second regions of the selection transistors, and a plurality of shared control regions overlying the common region. Each shared control region forms the control regions of a plurality of adjacent selection transistors and accommodates the first regions of the plurality of adjacent selection transistors as well as contact portions of the shared control region. Blocks of adjacent selection transistors of the plurality of selection transistors share a contact portion and the first regions of a block of adjacent selection transistors are arranged along the shared control region between two contact portions. A plurality of biasing structures are formed between pairs of first regions of adjacent selection transistors, for modifying a charge distribution in the shared control region below the biasing structures.
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