发明授权
- 专利标题: Flash memory system and data writing method thereof
- 专利标题(中): 闪存系统及其数据写入方法
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申请号: US12502700申请日: 2009-07-14
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公开(公告)号: US07899980B2公开(公告)日: 2011-03-01
- 发明人: Jeong-Mi Kwon
- 申请人: Jeong-Mi Kwon
- 申请人地址: KR Suwon-Si
- 专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人地址: KR Suwon-Si
- 代理机构: F. Chau & Associates, LLC
- 优先权: KR2003-50502 20030723
- 主分类号: G06F12/00
- IPC分类号: G06F12/00
摘要:
Provided are a flash memory system and a data reading method thereof, the method including serially reading groups of data and parity codes corresponding to each of the respective groups from a page buffer; calculating the parity for each serially read group; checking for errors in each serially read group by comparing each calculated parity with a corresponding serially read parity code, respectively; and providing an output signal indicative of any comparative parity errors detected, wherein the reading of each group of data is followed by the reading of the parity code for the group, and the checking for errors in each group of data is done during the serial reading operation.
公开/授权文献
- US20090271568A1 FLASH MEMORY SYSTEM AND DATA WRITING METHOD THEREOF 公开/授权日:2009-10-29
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