发明授权
US07902064B1 Method of forming a layer to enhance ALD nucleation on a substrate
有权
形成层以增强基底上的ALD成核的方法
- 专利标题: Method of forming a layer to enhance ALD nucleation on a substrate
- 专利标题(中): 形成层以增强基底上的ALD成核的方法
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申请号: US12121661申请日: 2008-05-15
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公开(公告)号: US07902064B1公开(公告)日: 2011-03-08
- 发明人: Tony Chiang , Chi-I Lang , Zachary Fresco
- 申请人: Tony Chiang , Chi-I Lang , Zachary Fresco
- 申请人地址: US CA San Jose
- 专利权人: Intermolecular, Inc.
- 当前专利权人: Intermolecular, Inc.
- 当前专利权人地址: US CA San Jose
- 主分类号: H01L21/4763
- IPC分类号: H01L21/4763
摘要:
A layer to enhance nucleation of a substrate is described, including a method to form the layer, the method including obtaining a substrate comprising a patterned feature comprising a dielectric region and a conductive region, selectively forming a self-aligned monolayer (SAM) on the dielectric region of the substrate to enhance nucleation process of a first precursor, and depositing the first precursor on the substrate, the precursor to adsorb on the SAM.
公开/授权文献
- US3224243A Method of thickening the wall of a tube 公开/授权日:1965-12-21