发明授权
- 专利标题： Double gate depletion mode MOSFET
- 专利标题（中）： 双栅耗尽型MOSFET
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申请号： US11972811申请日： 2008-01-11
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公开(公告)号： US07902606B2公开(公告)日： 2011-03-08
- 发明人: John B. Campi, Jr. , Richard A. Phelps , Robert M. Rassel , Michael J. Zierak
- 申请人： John B. Campi, Jr. , Richard A. Phelps , Robert M. Rassel , Michael J. Zierak
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 代理机构： Scully, Scott, Murphy & Presser, P.C.
- 代理商 Richard M. Kotulak, Esq.
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; H01L21/336
摘要：
A metal-oxide-semiconductor field effect transistor (MOSFET) has a body layer that follows the contour of exposed surfaces of a semiconductor substrate and contains a bottom surface of a shallow trench and adjoined sidewalls. A bottom electrode layer vertically abuts the body layer and provides an electrical bias to the body layer. A top electrode and source and drain regions are formed on the body layer. The thickness of the body layer is selected to allow full depletion of the body layer by the top electrode and a bottom electrode layer. The portion of the body layer underneath the shallow trench extends the length of a channel to enable a high voltage operation. Further, the MOSFET provides a double gate configuration and a tight control of the channel to enable a complete pinch-off of the channel and a low off-current in a compact volume.
公开/授权文献
- US20090179272A1 DOUBLE GATE DEPLETION MODE MOSFET 公开/授权日：2009-07-16
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