Invention Grant
- Patent Title: Bias circuit scheme for improved reliability in high voltage supply with low voltage device
- Patent Title (中): 偏压电路方案,用于提高低压电源的可靠性
-
Application No.: US12330828Application Date: 2008-12-09
-
Publication No.: US07902904B2Publication Date: 2011-03-08
- Inventor: Pankaj Kumar , Makeshwar Kothandaraman , Dipankar Bhattacharya , John Kriz , Jeffrey J. Nagy , Pramod Elamannu Parameswaran
- Applicant: Pankaj Kumar , Makeshwar Kothandaraman , Dipankar Bhattacharya , John Kriz , Jeffrey J. Nagy , Pramod Elamannu Parameswaran
- Applicant Address: US CA Milpitas
- Assignee: LSI Corporation
- Current Assignee: LSI Corporation
- Current Assignee Address: US CA Milpitas
- Agency: Cochran Freund & Young LLC
- Agent Alexander J. Neudeck
- Main IPC: G05F1/10
- IPC: G05F1/10

Abstract:
Disclosed is a bias circuit with a first resistor connected between the supply voltage and a feedback node. Resistors are connected in series between the feedback node and the reference supply voltage. The connections between the resistors define at least one bias voltage. A second resistor is connected between the feedback node and a first drain node. A first field-effect transistor has a first gate node, the first drain node, and a first source node. The gate node is connected to the first supply voltage. A second field-effect transistor has a second gate node, a second drain node, and a second source node. The second drain node is connected to the first source node. The second gate node is connected to the bias voltage. The second source node is connected to an output signal node. The output signal node capable of experiencing an overshoot voltage.
Public/Granted literature
- US20100141334A1 Bias circuit scheme for improved reliability in high voltage supply with low voltage device Public/Granted day:2010-06-10
Information query
IPC分类: