发明授权
- 专利标题： Methods for forming a ruthenium-based film on a substrate
- 专利标题（中）： 在基板上形成钌基膜的方法
-
申请号： US12034776申请日： 2008-02-21
-
公开(公告)号： US07906175B2公开(公告)日： 2011-03-15
- 发明人: Bin Xia , Ashutosh Misra
- 申请人： Bin Xia , Ashutosh Misra
- 申请人地址： US TX Houston
- 专利权人： Air Liquide Electronics U.S. LP
- 当前专利权人： Air Liquide Electronics U.S. LP
- 当前专利权人地址： US TX Houston
- 代理商 Patricia E. McQueeney
- 主分类号： C23C16/00
- IPC分类号： C23C16/00
摘要：
Methods for forming a film on a substrate in a semiconductor manufacturing process. A reaction chamber a substrate in the chamber are provided. A ruthenium based precursor, which includes ruthenium tetroxide dissolved in a mixture of at least two non-flammable fluorinated solvents, is provided and a ruthenium containing film is produced on the substrate.
公开/授权文献
信息查询
IPC分类:
