发明授权
- 专利标题： Pillar devices and methods of making thereof
- 专利标题（中）： 支柱装置及其制造方法
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申请号： US12007781申请日： 2008-01-15
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公开(公告)号： US07906392B2公开(公告)日： 2011-03-15
- 发明人: Vance Dunton , S. Brad Herner , Paul Wai Kie Poon , Chuanbin Pan , Michael Chan , Michael Konevecki , Usha Raghuram
- 申请人： Vance Dunton , S. Brad Herner , Paul Wai Kie Poon , Chuanbin Pan , Michael Chan , Michael Konevecki , Usha Raghuram
- 申请人地址： US CA Milpitas
- 专利权人： SanDisk 3D LLC
- 当前专利权人： SanDisk 3D LLC
- 当前专利权人地址： US CA Milpitas
- 代理机构： The Marbury Law Group, PLLC
- 主分类号： H01L21/8242
- IPC分类号： H01L21/8242 ; H01L21/8234 ; H01L21/8222
摘要：
A method of making a semiconductor device includes providing an insulating layer containing a plurality of openings, forming a first semiconductor layer in the plurality of openings in the insulating layer and over the insulating layer, and removing a first portion of the first semiconductor layer, such that first conductivity type second portions of the first semiconductor layer remain in lower portions of the plurality of openings in the insulating layer, and upper portions of the plurality of openings in the insulating layer remain unfilled. The method also includes forming a second semiconductor layer in the upper portions of the plurality of openings in the insulating layer and over the insulating layer, and removing a first portion of the second semiconductor layer located over the insulating layer. The second conductivity type second portions of the second semiconductor layer remain in upper portions of the plurality of openings in the insulating layer to form a plurality of pillar shaped diodes in the plurality of openings.
公开/授权文献
- US20090179310A1 Pillar devices and methods of making thereof 公开/授权日：2009-07-16
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