发明授权
- 专利标题： Nitride micro light emitting diode with high brightness and method for manufacturing the same
- 专利标题（中）： 具有高亮度的氮化物微型发光二极管及其制造方法
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申请号： US12545795申请日： 2009-08-21
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公开(公告)号： US07906787B2公开(公告)日： 2011-03-15
- 发明人: Sang-Kyu Kang
- 申请人： Sang-Kyu Kang
- 代理机构： Intellectual Property Law Group LLP
- 代理商 Juneko Jackson; Otto O. Lee
- 主分类号： H01L27/15
- IPC分类号： H01L27/15
摘要：
The present invention relates to a nitride micro light emitting diode (LED) with high brightness and a method of manufacturing the same. The present invention provides a nitride micro LED with high brightness and a method of manufacturing the same, wherein a plurality of micro-sized luminous pillars 10 are formed in a substrates, a gap filling material such as SiO2, Si3N4, DBR(ZrO2/SiO2HfO2/SiO2), polyamide or the like is filled in gaps between the micro-sized luminous pillars, a top surface 11 of the luminous pillar array and the gap filling material is planarized through a CMP processing, and then a transparent electrode 6 having a large area is formed thereon, so that all the luminous pillars can be driven at the same time. In addition, the present invention provides a nitride micro LED with high brightness in which uniformity in formation of electrodes on the micro-sized luminous pillars array is enhanced by employing a flip-chip structure.
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