发明授权
- 专利标题: Ge imager for short wavelength infrared
- 专利标题(中): Ge成像仪用于短波长红外
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申请号: US12630893申请日: 2009-12-04
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公开(公告)号: US07906825B2公开(公告)日: 2011-03-15
- 发明人: Douglas J. Tweet , Jer-Shen Maa , Jong-Jan Lee , Sheng Teng Hsu
- 申请人: Douglas J. Tweet , Jer-Shen Maa , Jong-Jan Lee , Sheng Teng Hsu
- 申请人地址: US WA Camas
- 专利权人: Sharp Laboratories of America, Inc.
- 当前专利权人: Sharp Laboratories of America, Inc.
- 当前专利权人地址: US WA Camas
- 代理机构: Law Office of Gerald Maliszewski
- 代理商 Gerald Maliszewski
- 主分类号: H01L27/14
- IPC分类号: H01L27/14
摘要:
A germanium (Ge) short wavelength infrared (SWIR) imager and associated fabrication process are provided. The imager comprises a silicon (Si) substrate with doped wells. An array of pin diodes is formed in a relaxed Ge-containing film overlying the Si substrate, each pin diode having a flip-chip interface. There is a Ge/Si interface, and a doped Ge-containing buffer interposed between the Ge-containing film and the Ge/Si interface. An array of Si CMOS readout circuits is bonded to the flip-chip interfaces. Each readout circuit has a zero volt diode bias interface.
公开/授权文献
- US20100090110A1 Ge Imager for Short Wavelength Infrared 公开/授权日:2010-04-15
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