Invention Grant
- Patent Title: Process for the preparation of piezoelectric crystal elements
- Patent Title (中): 制备压电晶体元件的工艺
-
Application No.: US12252037Application Date: 2008-10-15
-
Publication No.: US07908722B2Publication Date: 2011-03-22
- Inventor: Pengdi Han
- Applicant: Pengdi Han
- Applicant Address: US IL Bolingbrook
- Assignee: H.C. Materials Corporation
- Current Assignee: H.C. Materials Corporation
- Current Assignee Address: US IL Bolingbrook
- Agency: Lackenbach Siegel., LLP
- Agent Andrew F. Young, Esq.
- Main IPC: H01L41/04
- IPC: H01L41/04 ; H02N2/00
Abstract:
A process for the preparation of piezoelectric single crystal elements involving the steps of mechanically finishing of a single crystal element with cuttings such as zxt±45°, coating electrodes on a pair of Z surfaces, poling the single crystal in a direction along the axis under a 500V/mm electric field.
Public/Granted literature
- US20090179525A1 PIEZOELECTRIC CRYSTAL ELEMENTS OF SHEAR MODE AND PROCESS FOR THE PREPARATION THEREOF Public/Granted day:2009-07-16
Information query
IPC分类:
