公开(公告)号：US20150071029A1

公开(公告)日：2015-03-12

申请号：US14019750

申请日：2013-09-06

Applicant: Pengdi Han ,  Jian Tian ,  Kevin Meneou ,  Brandon Stone

Inventor： Pengdi Han ,  Jian Tian ,  Kevin Meneou ,  Brandon Stone

IPC: G01S7/52

CPC classification number: H01L41/183 ,  A61B8/00 ,  A61B8/4483 ,  C01G33/006 ,  C01P2002/50 ,  C01P2004/03 ,  C04B35/491 ,  C04B35/495 ,  C04B35/499 ,  C04B2235/3206 ,  C04B2235/3215 ,  C04B2235/3224 ,  C04B2235/3234 ,  C04B2235/3236 ,  C04B2235/3249 ,  C04B2235/3255 ,  C04B2235/3286 ,  C04B2235/3296 ,  C04B2235/3298 ,  C04B2235/76 ,  C04B2235/768 ,  C04B2235/96 ,  C30B29/30 ,  C30B29/32 ,  G03H3/00 ,  H01L41/18 ,  H01L41/1875 ,  H01L41/1876 ,  H01L41/332 ,  H01L41/338 ,  H03H9/02015 ,  Y10T29/42

Abstract: The present invention generally relates to high frequency piezoelectric crystal composites, devices, and method for manufacturing the same. In adaptive embodiments an improved imaging device, particularly a medical imaging device or a distance imaging device, for high frequency (>20 MHz) applications involving an imaging transducer assembly is coupled to a signal imagery processor. Additionally, the proposed invention presents a system for photolithography based micro-machined piezoelectric crystal composites and their uses resulting in improved performance parameters.

Abstract translation: 本发明一般涉及高频压电晶体复合材料，器件及其制造方法。 在自适应实施例中，用于涉及成像换能器组件的高频（> 20MHz）应用的改进的成像装置，特别是医学成像装置或距离成像装置被耦合到信号图像处理器。 另外，所提出的发明提出了一种用于基于光刻的微加工压电晶体复合材料的系统及其用途，从而提高了性能参数。

公开(公告)号：US20070034141A1

公开(公告)日：2007-02-15

申请号：US11205875

申请日：2005-08-17

Applicant: Pengdi Han

Inventor： Pengdi Han

IPC: C30B11/00 ,  C30B17/00 ,  C30B9/00 ,  C30B21/02 ,  C30B28/06

CPC classification number: C30B11/00 ,  C30B29/30 ,  C30B29/32

Abstract: This invention provides a hybrid Stockbarger zone-leveling melting method for seeded crystallization and the manufacture of homogenous large-sized crystals of lead magnesium niobate-lead titanate (PMN-PT) based solid solutions and related piezocrystals. The invention provides three temperature zones resulting in increased compositional homogeneity and speed of crystal growth, in a cost effective multi-crucible configuration.

Abstract translation: 本发明提供了一种用于种子结晶的混合库存扩散器区域平整熔化方法，以及制造基于铌酸铅铌酸铅 - 钛酸铅（PMN-PT）的固溶体和相关压晶体的均匀大尺寸晶体。 本发明提供三个温度区域，其在成本有效的多坩埚构造中导致增加的组成均匀性和晶体生长速度。

公开(公告)号：US09519269B2

公开(公告)日：2016-12-13

申请号：US13821400

申请日：2011-10-13

Applicant: Pengdi Han ,  Jian Tian ,  Kevin Meneou ,  Brandon Stone

Inventor： Pengdi Han ,  Jian Tian ,  Kevin Meneou ,  Brandon Stone

IPC: H01L41/187 ,  G03H3/00 ,  A61B8/00 ,  C01G33/00 ,  H01L41/18 ,  H01L41/332 ,  H01L41/338 ,  C30B29/30 ,  C30B29/32

CPC classification number: H01L41/183 ,  A61B8/00 ,  A61B8/4483 ,  C01G33/006 ,  C01P2002/50 ,  C01P2004/03 ,  C04B35/491 ,  C04B35/495 ,  C04B35/499 ,  C04B2235/3206 ,  C04B2235/3215 ,  C04B2235/3224 ,  C04B2235/3234 ,  C04B2235/3236 ,  C04B2235/3249 ,  C04B2235/3255 ,  C04B2235/3286 ,  C04B2235/3296 ,  C04B2235/3298 ,  C04B2235/76 ,  C04B2235/768 ,  C04B2235/96 ,  C30B29/30 ,  C30B29/32 ,  G03H3/00 ,  H01L41/18 ,  H01L41/1875 ,  H01L41/1876 ,  H01L41/332 ,  H01L41/338 ,  H03H9/02015 ,  Y10T29/42

Abstract: The present invention generally relates to high frequency piezoelectric crystal composites, devices, and method for manufacturing the same. In adaptive embodiments an improved imaging device, particularly a medical imaging device or a distance imaging device, for high frequency (>20 MHz) applications involving an imaging transducer assembly is coupled to a signal imagery processor. Additionally, the proposed invention presents a system for photolithography based micro-machined piezoelectric crystal composites and their uses resulting in improved performance parameters.

公开(公告)号：US20150177536A1

公开(公告)日：2015-06-25

申请号：US14390522

申请日：2013-04-04

Applicant: PENGDI HAN

Inventor： Pengdi Han ,  Welling Yan

IPC: G02F1/05 ,  G02F1/21 ,  B29D11/00 ,  G02F1/01

CPC classification number: G02F1/055 ,  B29D11/00932 ,  G02F1/0027 ,  G02F1/0136 ,  G02F1/05 ,  G02F1/21 ,  G02F1/3558 ,  G02F2001/212

Abstract: The present invention relates to an Electro-Optical (E-O) crystal elements, their applications and the processes for the preparation thereof. More specifically, the present invention relates to the E-O crystal elements (which can be made from doped or un-doped PMN-PT, PIN-PMN-PT or PZN-PT ferroelectric crystals) showing super-high linear E-O coefficient yc, e.g., transverse effective linear E-O coefficient yTc more than 1100 pm/V and longitudinal effective linear E-O coefficient ylc up to 527 pm/V, which results in a very low half-wavelength voltage Vtx below 200V and Vtx below about 87V in a wide number of modulation, communication, laser, and industrial uses.

Abstract translation: 本发明涉及电光（E-O）晶体元件，其应用及其制备方法。 更具体地，本发明涉及显示超高线性EO系数yc的EO晶体元件（其可以由掺杂或未掺杂的PMN-PT，PIN-PMN-PT或PZN-PT铁电晶体制成），例如， 横向有效线性EO系数yTc大于1100pm / V，纵向有效线性EO系数ylc高达527pm / V，这导致非常低的半波长电压Vtx低于200V，Vtx低于约87V，在大量的调制 通信，激光和工业用途。

公开(公告)号：US20090241829A1

公开(公告)日：2009-10-01

申请号：US12373080

申请日：2007-07-12

Applicant: Pengdi Han ,  Jian Tian

Inventor： Pengdi Han ,  Jian Tian

IPC: C30B11/02

CPC classification number: C30B11/006 ,  C30B11/001 ,  C30B11/002 ,  C30B11/003 ,  C30B11/007 ,  C30B11/02 ,  C30B11/04 ,  C30B11/08 ,  C30B11/14 ,  C30B29/30 ,  C30B29/32 ,  C30B35/00 ,  H01L41/1875 ,  Y10T117/10 ,  Y10T117/1008 ,  Y10T117/1024 ,  Y10T117/1076 ,  Y10T117/108 ,  Y10T117/1092

Abstract: This invention includes a system and a method for growing crystals including a batch auto-feeding mechanism. The proposed system and method provide a minimization of compositional segregation effect during crystal growth by controlling growth rate involving a high-temperature flow control system operable in an open and a closed loop crystal growth process. The ability to control the growth rate without corresponding loss of volatilize-able elements enables significantly improvement in compositional homogeneity and a consequent increase in crystal yield. This growth system and method can be operated in production scale, simultaneously for a plurality of growth crucibles to further the reduction of manufacturing costs, particularly for the crystal materials of binary or ternary systems with volatile components, such as Lead (Pb) and Indium (In).

Abstract translation: 本发明包括一种用于生长晶体的系统和方法，包括批自动送料机构。 所提出的系统和方法通过控制在开环和闭环晶体生长过程中可操作的高温流动控制系统的生长速率来提供晶体生长过程中组分偏析效应的最小化。 控制生长速率而没有相应损失可挥发元素的能力可以显着提高组合均匀性，从而提高晶体产率。 这种生长系统和方法可以以生产规模操作，同时用于多个生长坩埚，以进一步降低制造成本，特别是对于具有挥发性组分的二元或三元体系的晶体材料，例如铅（Pb）和铟（ 在）。

公开(公告)号：US20070290579A1

公开(公告)日：2007-12-20

申请号：US11818735

申请日：2007-06-15

Applicant: Pengdi Han

Inventor： Pengdi Han

IPC: H01L41/187 ,  B05D5/12 ,  C04B35/46

CPC classification number: A61B8/4494 ,  G01C19/5607 ,  H01L41/0906 ,  H01L41/0986 ,  H01L41/0993 ,  H01L41/1132 ,  H01L41/18 ,  H01L41/183 ,  H01L41/1875 ,  H01L41/1876 ,  H01L41/257 ,  H01L41/29 ,  H01L41/338 ,  Y10T29/42 ,  Y10T29/49005 ,  Y10T29/49155

Abstract: Piezoelectric crystal elements are provided having preferred cut directions that optimize the shear mode piezoelectric properties. In the discovered cut directions, the crystal elements have super-high piezoelectric performance with d15, d24 and d36 shear modes at room temperature. The d15 shear mode crystal gives a maximum d value and is free from the cross-talk of d11 and d16. The d36 mode is extremely reliable compared to other shear elements due to its ready re-poling capability. The crystal elements may be beneficially used for high-sensitive acoustic transducers.

Abstract translation: 提供压电晶体元件，其具有优化剪切模式压电特性的优选切割方向。 在所发现的切割方向上，晶体元件在室温下具有超高压电性能，具有d 15，d 24和d 36剪切模式 。 d 15剪切模式晶体产生最大的d值，并且没有d 11和d 16的串扰。 由于其准备的极化能力，与其他剪切元件相比，d 36 S模式是非常可靠的。 晶体元件可有利地用于高灵敏度的声换能器。

公开(公告)号：US20060012270A1

公开(公告)日：2006-01-19

申请号：US11182704

申请日：2005-07-14

Applicant: Pengdi Han

Inventor： Pengdi Han

IPC: H01L41/187

CPC classification number: A61B8/4494 ,  G01C19/5607 ,  H01L41/0906 ,  H01L41/0986 ,  H01L41/0993 ,  H01L41/1132 ,  H01L41/18 ,  H01L41/183 ,  H01L41/1875 ,  H01L41/1876 ,  H01L41/257 ,  H01L41/29 ,  H01L41/338 ,  Y10T29/42 ,  Y10T29/49005 ,  Y10T29/49155

Abstract: Piezoelectric crystal elements are provided having preferred cut directions that optimize the shear mode piezoelectric properties. In the discovered cut directions, the crystal elements have super-high piezoelectric performance with d15, d24 and d36 shear modes at room temperature. The d15 shear mode crystal gives a maximum d value and is free from the cross-talk of d11 and d16. The d36 mode is extremely reliable compared to other shear elements due to its ready re-poling capability. The crystal elements may be beneficially used for high-sensitive acoustic transducers.

Abstract translation: 提供压电晶体元件，其具有优化剪切模式压电特性的优选切割方向。 在发现的切割方向上，晶体元件在室温下具有超高压电性能，具有d 15，d 24和d 36剪切模式 。 d 15剪切模式晶体产生最大的d值，并且没有d 11和d 16的串扰。 由于其准备的极化能力，与其他剪切元件相比，d 36 S模式是非常可靠的。 晶体元件可有利地用于高灵敏度的声换能器。

公开(公告)号：US09709832B2

公开(公告)日：2017-07-18

申请号：US15006762

申请日：2016-01-26

Applicant: Pengdi Han

Inventor： Pengdi Han ,  Welling Yan

IPC: G02F1/05 ,  G02F1/055 ,  G02F1/355 ,  G02F1/00 ,  B29D11/00 ,  G02F1/01 ,  G02F1/21

CPC classification number: G02F1/055 ,  B29D11/00932 ,  G02F1/0027 ,  G02F1/0136 ,  G02F1/05 ,  G02F1/21 ,  G02F1/3558 ,  G02F2001/212

Abstract: The present invention relates to an Electro-Optical (E-O) crystal elements, their applications and the processes for the preparation thereof. More specifically, the present invention relates to the E-O crystal elements (which can be made from doped or un-doped PMN-PT, PIN-PMN-PT or PZN-PT ferroelectric crystals) showing super-high linear E-O coefficient γc, e.g., transverse effective linear E-O coefficient γTc more than 1100 pm/V and longitudinal effective linear E-O coefficient γlc up to 527 pm/V, which results in a very low half-wavelength voltage Vlπ below 200V and VTπ below about 87V in a wide number of modulation, communication, laser, and industrial uses.

公开(公告)号：US08728238B2

公开(公告)日：2014-05-20

申请号：US13957074

申请日：2013-08-01

Applicant: Pengdi Han ,  Jian Tian

Inventor： Pengdi Han ,  Jian Tian

IPC: C30B35/00 ,  C30B13/28 ,  C30B15/30 ,  C30B11/00 ,  C30B13/00 ,  C30B21/04 ,  C30B28/08

CPC classification number: C30B11/006 ,  C30B11/001 ,  C30B11/002 ,  C30B11/003 ,  C30B11/007 ,  C30B11/02 ,  C30B11/04 ,  C30B11/08 ,  C30B11/14 ,  C30B29/30 ,  C30B29/32 ,  C30B35/00 ,  H01L41/1875 ,  Y10T117/10 ,  Y10T117/1008 ,  Y10T117/1024 ,  Y10T117/1076 ,  Y10T117/108 ,  Y10T117/1092

Abstract: This invention includes a system and a method for growing crystals including a batch auto-feeding mechanism. The proposed system and method provide a minimization of compositional segregation effect during crystal growth by controlling growth rate involving a high-temperature flow control system operable in an open and a closed loop crystal growth process. The ability to control the growth rate without corresponding loss of volatilize-able elements enables significantly improvement in compositional homogeneity and a consequent increase in crystal yield. This growth system and method can be operated in production scale, simultaneously for a plurality of growth crucibles to further the reduction of manufacturing costs, particularly for the crystal materials of binary or ternary systems with volatile components, such as Lead (Pb) and Indium (In).

Abstract translation: 本发明包括一种用于生长晶体的系统和方法，包括批自动送料机构。 所提出的系统和方法通过控制在开环和闭环晶体生长过程中可操作的高温流动控制系统的生长速率来提供晶体生长过程中组分偏析效应的最小化。 控制生长速率而没有相应损失可挥发元素的能力可以显着提高组合均匀性，从而提高晶体产率。 这种生长系统和方法可以以生产规模操作，同时用于多个生长坩埚，以进一步降低制造成本，特别是对于具有挥发性组分的二元或三元体系的晶体材料，例如铅（Pb）和铟（ 在）。

公开(公告)号：US08535442B2

公开(公告)日：2013-09-17

申请号：US12373080

申请日：2007-07-12

Applicant: Pengdi Han ,  Jian Tian

Inventor： Pengdi Han ,  Jian Tian

IPC: C30B35/00 ,  C30B13/28 ,  C30B11/00 ,  C30B13/00 ,  C30B21/04 ,  C30B28/08

CPC classification number: C30B11/006 ,  C30B11/001 ,  C30B11/002 ,  C30B11/003 ,  C30B11/007 ,  C30B11/02 ,  C30B11/04 ,  C30B11/08 ,  C30B11/14 ,  C30B29/30 ,  C30B29/32 ,  C30B35/00 ,  H01L41/1875 ,  Y10T117/10 ,  Y10T117/1008 ,  Y10T117/1024 ,  Y10T117/1076 ,  Y10T117/108 ,  Y10T117/1092

Abstract: This invention includes a system and a method for growing crystals including a batch auto-feeding mechanism. The proposed system and method provide a minimization of compositional segregation effect during crystal growth by controlling growth rate involving a high-temperature flow control system operable in an open and a closed loop crystal growth process. The ability to control the growth rate without corresponding loss of volatilize-able elements enables significantly improvement in compositional homogeneity and a consequent increase in crystal yield. This growth system and method can be operated in production scale, simultaneously for a plurality of growth crucibles to further the reduction of manufacturing costs, particularly for the crystal materials of binary or ternary systems with volatile components, such as Lead (Pb) and Indium (In).

Abstract translation: 本发明包括一种用于生长晶体的系统和方法，包括批自动送料机构。 所提出的系统和方法通过控制在开环和闭环晶体生长过程中可操作的高温流动控制系统的生长速率来提供晶体生长过程中组分偏析效应的最小化。 控制生长速率而没有相应损失可挥发元素的能力可以显着提高组合均匀性，从而提高晶体产率。 这种生长系统和方法可以以生产规模操作，同时用于多个生长坩埚，以进一步降低制造成本，特别是对于具有挥发性组分的二元或三元体系的晶体材料，例如铅（Pb）和铟（ 在）。