Invention Grant
- Patent Title: Quantum dot electroluminescence device and method of fabricating the same
- Patent Title (中): 量子点电致发光器件及其制造方法
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Application No.: US11612179Application Date: 2006-12-18
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Publication No.: US07910400B2Publication Date: 2011-03-22
- Inventor: Soon-jae Kwon , Byoung-Iyong Choi , Kyung-sang Cho , Byung-ki Kim
- Applicant: Soon-jae Kwon , Byoung-Iyong Choi , Kyung-sang Cho , Byung-ki Kim
- Applicant Address: KR
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR
- Agency: Cantor Colburn LLP
- Priority: KR10-2006-0015159 20060216
- Main IPC: H01L21/20
- IPC: H01L21/20

Abstract:
A quantum dot electroluminescence device and a method of fabricating the same are provided. The quantum dot electroluminescence device comprises an insulating substrate; a quantum dot luminescence layer supported by the insulating substrate, and composed of a monolayer or multilayer of quantum dots, which are cross-linked by a cross-link agent; an anode electrode and a cathode electrode connected to an external power supply to inject carriers to the quantum dot luminescence layer; a hole transfer layer interposed between the anode electrode and the quantum dot luminescence layer, and composed of p-type polymer semiconductor; and an electron transfer layer interposed between the cathode electrode and the quantum dot luminescence layer, and composed of metal oxide or n-type polymer semiconductor.
Public/Granted literature
- US20070215856A1 QUANTUM DOT ELECTROLUMINESCENCE DEVICE AND METHOD OF FABRICATING THE SAME Public/Granted day:2007-09-20
Information query
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