Invention Grant
- Patent Title: Distributed high voltage JFET
- Patent Title (中): 分布式高电压JFET
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Application No.: US12176488Application Date: 2008-07-21
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Publication No.: US07910417B2Publication Date: 2011-03-22
- Inventor: Philip L. Hower , David A. Walch , John Lin , Steven L. Merchant
- Applicant: Philip L. Hower , David A. Walch , John Lin , Steven L. Merchant
- Applicant Address: US TX Dallas
- Assignee: Texas Instruments Incorporated
- Current Assignee: Texas Instruments Incorporated
- Current Assignee Address: US TX Dallas
- Agent Warren L. Franz; Wade J. Brady, III; Frederick J. Telecky, Jr.
- Main IPC: H01L21/337
- IPC: H01L21/337
Abstract:
A Junction Field Effect Transistor (JFET) can be fabricated with a well region that include a channel region having an average dopant concentration substantially less the average doping concentration of the remaining portions of the well region. The lower average doping concentration of channel region compared to the remaining portions of the well region reduces the pinch-off voltage of the JFET.
Public/Granted literature
- US20080299716A1 DISTRIBUTED HIGH VOLTAGE JFET Public/Granted day:2008-12-04
Information query
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