Invention Grant
- Patent Title: Power semiconductor device
- Patent Title (中): 功率半导体器件
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Application No.: US11870133Application Date: 2007-10-10
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Publication No.: US07910949B2Publication Date: 2011-03-22
- Inventor: Yukio Yasuda , Atsunobu Kawamoto , Shinsuke Goudo
- Applicant: Yukio Yasuda , Atsunobu Kawamoto , Shinsuke Goudo
- Applicant Address: JP Tokyo
- Assignee: Mitsubishi Electric Corporation
- Current Assignee: Mitsubishi Electric Corporation
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2006-294074 20061030; JP2007-130957 20070516
- Main IPC: H01L29/74
- IPC: H01L29/74

Abstract:
A power semiconductor device includes a conductive board and a switching element mounted on the conductive board and electrically connected thereto. The power semiconductor device also includes an integrated circuit mounted on the conductive board at a distance from the switching element and electrically connected thereto. The switching element turns ON/OFF a connection between first and second main electrodes in response to a control signal inputted to a control electrode. The integrated circuit includes a control circuit which controls ON/OFF the switching element and a back side voltage detection element which detects a voltage of the back side of the integrated circuit.
Public/Granted literature
- US20080100147A1 POWER SEMICONDUCTOR DEVICE Public/Granted day:2008-05-01
Information query
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