公开(公告)号：US07910949B2

公开(公告)日：2011-03-22

申请号：US11870133

申请日：2007-10-10

申请人： Yukio Yasuda ,  Atsunobu Kawamoto ,  Shinsuke Goudo

发明人： Yukio Yasuda ,  Atsunobu Kawamoto ,  Shinsuke Goudo

IPC分类号： H01L29/74

CPC分类号： H01L25/18 ,  H01L27/0259 ,  H01L2224/05554 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/48145 ,  H01L2224/48247 ,  H01L2224/49113 ,  H01L2224/49175 ,  H01L2224/73215 ,  H01L2224/73265 ,  H01L2225/06568 ,  H01L2924/1301 ,  H01L2924/13034 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2924/30107 ,  H02M7/003 ,  Y10T307/944 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

摘要： A power semiconductor device includes a conductive board and a switching element mounted on the conductive board and electrically connected thereto. The power semiconductor device also includes an integrated circuit mounted on the conductive board at a distance from the switching element and electrically connected thereto. The switching element turns ON/OFF a connection between first and second main electrodes in response to a control signal inputted to a control electrode. The integrated circuit includes a control circuit which controls ON/OFF the switching element and a back side voltage detection element which detects a voltage of the back side of the integrated circuit.

摘要翻译： 功率半导体器件包括导电板和安装在导电板上并与其电连接的开关元件。 功率半导体器件还包括安装在导电板上距开关元件一定距离并与其电连接的集成电路。 响应于输入到控制电极的控制信号，开关元件将第一和第二主电极之间的连接接通/断开。 集成电路包括控制开关元件的导通/截止的控制电路和检测集成电路的背面的电压的背面电压检测元件。

公开(公告)号：US20080100147A1

公开(公告)日：2008-05-01

申请号：US11870133

申请日：2007-10-10

申请人： Yukio Yasuda ,  Atsunobu Kawamoto ,  Shinsuke Goudo

发明人： Yukio Yasuda ,  Atsunobu Kawamoto ,  Shinsuke Goudo

IPC分类号： H01H9/54

CPC分类号： H01L25/18 ,  H01L27/0259 ,  H01L2224/05554 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/48145 ,  H01L2224/48247 ,  H01L2224/49113 ,  H01L2224/49175 ,  H01L2224/73215 ,  H01L2224/73265 ,  H01L2225/06568 ,  H01L2924/1301 ,  H01L2924/13034 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2924/30107 ,  H02M7/003 ,  Y10T307/944 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

摘要： The power semiconductor device of the present invention is provided with a conductive board 3, a switching element 1 mounted on the conductive board 3 and electrically connected thereto and an integrated circuit 4 mounted on the conductive board 3 at a distance from the switching element 1 and electrically connected thereto. The switching element 1 turns ON/OFF a connection between first and second main electrodes in response to a control signal inputted to a control electrode. The integrated circuit 4 has a control circuit 72 which controls ON/OFF of the switching element 1 and a back side voltage detection element 31 which detects a voltage of the back side of the integrated circuit 4.

摘要翻译： 本发明的功率半导体装置设置有导电板3，安装在导电板3上并与其电连接的开关元件1和安装在导电板3上距离开关元件1一定距离的集成电路4，以及 电连接到其上。 开关元件1响应于输入到控制电极的控制信号而使第一和第二主电极之间的连接接通/断开。 集成电路4具有控制开关元件1的导通/截止的控制电路72和检测集成电路4的背侧的电压的背面电压检测元件31。

公开(公告)号：US08605408B2

公开(公告)日：2013-12-10

申请号：US12877435

申请日：2010-09-08

申请人： Shinsuke Godo ,  Yukio Yasuda ,  Atsunobu Kawamoto

发明人： Shinsuke Godo ,  Yukio Yasuda ,  Atsunobu Kawamoto

IPC分类号： F23Q3/00

CPC分类号： F02P3/0442 ,  F02D2041/2048 ,  F02D2041/2051 ,  F02P3/0554

摘要： A power semiconductor device for an igniter comprises: a first semiconductor switching device; and an integrated circuit, wherein the integrated circuit includes: a second semiconductor switching device connected in parallel with the first semiconductor switching device and having a smaller current capacity than a current capacity of the first semiconductor switching device; a delay circuit delaying a control input signal so that the second semiconductor switching device is energized prior to the first semiconductor switching device; a third semiconductor switching device including a thyristor structure connected to a high voltage side main terminal of the second semiconductor switching device and being made conductive by a part of a main current flowing through the energized second semiconductor switching device; and a first excess voltage detection circuit stopping the first semiconductor switching device when voltage on the high voltage side main terminal is equal to or more than a predetermined voltage.

摘要翻译： 一种用于点火器的功率半导体器件包括：第一半导体开关器件; 以及集成电路，其中所述集成电路包括：与所述第一半导体开关器件并联连接并且具有比所述第一半导体开关器件的电流容量更小的电流容量的第二半导体开关器件; 延迟电路延迟控制输入信号，使得第二半导体开关器件在第一半导体开关器件之前被通电; 第三半导体开关器件，其包括与所述第二半导体开关器件的高电压侧主端子连接的晶闸管结构，并且通过流过所述通电的第二半导体开关器件的主电流的一部分导通; 以及当高电压侧主端子上的电压等于或大于预定电压时，第一过电压检测电路停止第一半导体开关器件。

公开(公告)号：US5652520A

公开(公告)日：1997-07-29

申请号：US554717

申请日：1995-11-07

申请人： Atsunobu Kawamoto ,  Yukio Yasuda

发明人： Atsunobu Kawamoto ,  Yukio Yasuda

IPC分类号： F02D45/00 ,  F02P17/12 ,  F02P17/00

CPC分类号： F02P17/12 ,  F02P2017/125

摘要： An internal combustion engine misfire sensing circuit comprises an ion current sensing circuit for sensing an ion current in the combustion chamber of an internal combustion engine, a current/voltage conversion circuit for converting the sensed ion current into a voltage and a waveform shaping circuit for shaping the waveform of an output of the current/voltage conversion circuit. The waveform shaping circuit includes a second comparator for comparing a voltage of a third capacitor with first and second reference voltages for outputting a misfire sensing signal and a capacitor charging/discharging circuit for charging the third capacitor in response to the rising up of an output of the current/voltage conversion circuit and discharging the third capacitor based on the input of the misfire sensing signal. With this arrangement a misfire can be sensed even in an internal combustion engine having multiple cylinders, the number of parts can be reduced as well as the area of circuits can be reduced.

摘要翻译： 内燃机失火检测电路包括用于感测内燃机的燃烧室中的离子电流的离子电流检测电路，用于将感测的离子电流转换为电压的电流/电压转换电路和用于成形的波形整形电路 电流/电压转换电路的输出的波形。 波形整形电路包括：第二比较器，用于比较第三电容器的电压与用于输出失火检测信号的第一和第二参考电压;以及用于响应于第三电容器的输出的上升而使第三电容器充电的电容器充电/放电电路 电流/电压转换电路，并基于失火感测信号的输入放电第三电容器。 利用这种布置，即使在具有多个气缸的内燃机中也可以感测到失火，可以减少部件的数量以及可以减小电路的面积。

公开(公告)号：US5548220A

公开(公告)日：1996-08-20

申请号：US433755

申请日：1995-05-04

申请人： Atsunobu Kawamoto ,  Yukio Yasuda

发明人： Atsunobu Kawamoto ,  Yukio Yasuda

IPC分类号： F02P3/04 ,  F02P17/12 ,  F02P17/00

CPC分类号： F02P17/12 ,  F02P2017/125

摘要： An apparatus for detecting a misfire in an internal combustion engine that is capable of preventing erroneous detection in a period in which the discharged voltage on a secondary ignition coil is charged. The apparatus having a capacitor, which is supplied with bias voltage from a primary side of an ignition coil to be electrically charged to apply the charged voltage to the spark plug at the time of discharge of the spark plug to cause an ionic current to flow and a misfire detection circuit for determining whether or not a misfire has taken place in accordance with detection of the ionic current flowing from the capacitor. The apparatus for detecting a misfire in an internal combustion engine includes a discharge-period detecting Zener diode disposed between another end of the primary coil and an inverting input terminal of an operational amplifier, having Zener voltage lower than the Zener voltage of a Zener diode, which sets voltage to be charged into the capacitor, and connected in a direction in which an electric current flowing while exceeding the Zener voltage is caused to flow toward the inverting input terminal of the operational amplifier.

摘要翻译： 一种用于检测内燃机中的失火的装置，其能够防止在二次点火线圈上的放电电压被充电的时段内的错误检测。 该装置具有电容器，该电容器从点火线圈的初级侧提供带电电压的偏置电压，以在放电火花塞时向火花塞施加充电电压以使离子电流流动， 用于根据从电容器流出的离子电流的检测来确定是否发生失火的失火检测电路。 用于检测内燃机中的失火的装置包括放电周期检测齐纳二极管，其设置在初级线圈的另一端和运算放大器的反相输入端之间，其齐纳电压低于齐纳二极管的齐纳电压， 其将要充电的电压设置到电容器中，并且在使超过齐纳压的电流流向运算放大器的反相输入端的方向上连接。

公开(公告)号：US20110134581A1

公开(公告)日：2011-06-09

申请号：US12877348

申请日：2010-09-08

申请人： Shinsuke GODO ,  Yukio Yasuda ,  Atsunobu Kawamoto

发明人： Shinsuke GODO ,  Yukio Yasuda ,  Atsunobu Kawamoto

IPC分类号： F23Q3/00

CPC分类号： F02P3/0554 ,  H01L2924/0002 ,  H01L2924/00

摘要： A power semiconductor device for an igniter comprises: a semiconductor switching device causing a current to flow through a primary side of an ignition coil or shutting off the current flowing through the primary side of the ignition coil; an integrated circuit driving and controlling the semiconductor switching device; and a temperature sensing element sensing temperature of the semiconductor switching device, wherein the integrated circuit including an overheat protection circuit limiting a current through the semiconductor switching device to a value lower than a current through the semiconductor switching device during normal operation, when temperature sensed by the temperature sensing element is over predetermined temperature.

摘要翻译： 一种用于点火器的功率半导体器件包括：半导体开关器件，其使电流流过点火线圈的初级侧或切断流过点火线圈的初级侧的电流; 驱动和控制半导体开关器件的集成电路; 以及温度感测元件感测半导体开关器件的温度，其中集成电路包括过热保护电路，其在正常操作期间将通过半导体开关器件的电流限制在低于通过半导体开关器件的电流的值，当温度由 温度感测元件超过预定温度。

公开(公告)号：US5690085A

公开(公告)日：1997-11-25

申请号：US738282

申请日：1996-10-25

申请人： Atsunobu Kawamoto

发明人： Atsunobu Kawamoto

IPC分类号： F02P3/05 ,  F02P3/055

CPC分类号： F02P3/051

摘要： An ignition coil control circuit for controlling a current flowing to a primary coil of an ignition coil, comprises a switching circuit for switching the primary coil of the ignition coil, a driving circuit for driving the switching circuit, a control signal output circuit for generating and outputting a driving control signal to the driving circuit in accordance with a signal from an ECU, and a current limiting circuit for detecting a value of the current fed to the primary coil by the switching circuit and controlling the switching circuit to make the current value not larger than a predetermined value and wherein the control signal output circuit uses the signal from the ECU as its power source, and the current limiting circuit uses a switching driving signal output from the driving circuit for driving the switching circuit as its power source.

摘要翻译： 一种用于控制流向点火线圈的初级线圈的电流的点火线圈控制电路，包括用于切换点火线圈的初级线圈的切换电路，用于驱动开关电路的驱动电路，用于产生和 根据来自ECU的信号将驱动控制信号输出到驱动电路;以及限流电路，用于检测由开关电路馈送到初级线圈的电流的值，并控制开关电路以使电流值不为 大于预定值，并且其中控制信号输出电路使用来自ECU的信号作为其电源，并且限流电路使用从驱动电路输出的用于驱动开关电路作为其电源的开关驱动信号。

公开(公告)号：US06407413B1

公开(公告)日：2002-06-18

申请号：US09609667

申请日：2000-07-03

申请人： Atsunobu Kawamoto

发明人： Atsunobu Kawamoto

IPC分类号： H01L2974

CPC分类号： H01L29/404 ,  H01L27/0255 ,  H01L29/7395 ,  H01L29/866

摘要： A semiconductor device includes a polysilicon diode layer formed so that pn junctions are positioned only in a portion (first portion) of the polysilicon diode layer which overlies at least one guard ring having a field alleviating structure for holding the breakdown voltage of an IGBT, thereby to prevent the deterioration of the breakdown voltage of the polysilicon diode resulting from the operation of a MOSFET including the pn junctions of the polysilicon diode layer between the collector and gate of the IGBT, an n− drift layer and a field oxide film.

摘要翻译： 半导体器件包括多晶硅二极管层，其形成为使得pn结仅位于多晶硅二极管层的覆盖至少一个具有用于保持IGBT的击穿电压的场减轻结构的保护环的部分（第一部分）中，从而 以防止由于包括IGBT的集电极和栅极之间的多晶硅二极管层的pn结，n-漂移层和场氧化物膜的MOSFET的操作导致的多晶硅二极管的击穿电压的劣化。

公开(公告)号：US08536655B2

公开(公告)日：2013-09-17

申请号：US13534695

申请日：2012-06-27

申请人： Koji Yamamoto ,  Atsunobu Kawamoto

发明人： Koji Yamamoto ,  Atsunobu Kawamoto

IPC分类号： H01L29/76

CPC分类号： H01L27/0629 ,  H01L27/0716

摘要： Even in the case where negative current flows in a semiconductor device, the potential of a semiconductor substrate is prevented from becoming lower than the potential of a deep semiconductor layer which is a component of a circuit element, and a parasitic element is prevented from operating, which accordingly prevents malfunction of the semiconductor device. The semiconductor device includes the n-type semiconductor substrate, a power element, the circuit element, and an external circuit. The external circuit includes a power supply, a resistive element having one end connected to the power supply, and a diode having its anode electrode connected to the other end of the resistive element and its cathode electrode connected to the ground. To the other end of the resistive element, a semiconductor layer is connected.

摘要翻译： 即使在半导体器件中的负电流流动的情况下，也可以防止半导体衬底的电位变得低于作为电路元件的一部分的深半导体层的电位，并且防止寄生元件的工作， 这相应地防止了半导体器件的故障。 半导体器件包括n型半导体衬底，功率元件，电路元件和外部电路。 外部电路包括电源，电阻元件，其一端连接到电源;以及二极管，其阳极连接到电阻元件的另一端，其阴极连接到地。 向电阻元件的另一端连接半导体层。

公开(公告)号：US06762461B2

公开(公告)日：2004-07-13

申请号：US10314154

申请日：2002-12-09

申请人： Atsunobu Kawamoto

发明人： Atsunobu Kawamoto

IPC分类号： H01L2362

CPC分类号： H01L27/0255

摘要： A protective circuit for protecting an IGBT from a stress due to application of an overvoltage which is induced by a surge such as static electricity is provided. The protective circuit allows for improvement in a voltage tolerance to a stress due to application of an overvoltage induced by a surge while ensuring a current tolerance to flow of a direct current from an external power supply when the external power supply is improperly connected in a direction contrary to a normal direction. The protective circuit includes a resistor having one end connected to a terminal for connecting to the external power supply and the other end connected to a semiconductor element, and a first zener diode including a cathode connected to the other end of the resistor. The protective circuit further includes a plurality of second zener diodes connected in series between the one end of the resistor and a generator of a constant potential such as a ground.

摘要翻译： 提供了用于保护IGBT免受由于诸如静电之类的浪涌引起的过电压引起的应力的保护电路。 保护电路允许改善由于施加由浪涌引起的过电压引起的应力的电压公差，同时确保当外部电源沿着方向不正确地连接时来自外部电源的直流电流的电流公差 与正常方向相反。 保护电路包括电阻器，其一端连接到用于连接到外部电源的端子，另一端连接到半导体元件，以及包括连接到电阻器的另一端的阴极的第一齐纳二极管。 保护电路还包括多个第二齐纳二极管，串联连接在电阻器的一端和恒定电位的发生器（例如接地）之间。