发明授权
- 专利标题： Semiconductor apparatus including a double-sided electrode element and method for manufacturing the same
- 专利标题（中）： 包括双面电极元件的半导体装置及其制造方法
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申请号： US12289772申请日： 2008-11-04
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公开(公告)号： US07911023B2公开(公告)日： 2011-03-22
- 发明人: Nozomu Akagi , Hitoshi Yamaguchi , Tetsuo Fujii
- 申请人： Nozomu Akagi , Hitoshi Yamaguchi , Tetsuo Fujii
- 申请人地址： JP Kariya
- 专利权人： Denso Corporation
- 当前专利权人： Denso Corporation
- 当前专利权人地址： JP Kariya
- 代理机构： Posz Law Group, PLC
- 优先权： JP2007-288894 20071106; JP2008-244841 20080924
- 主分类号： H01L21/70
- IPC分类号： H01L21/70
摘要：
A semiconductor apparatus is disclosed. The semiconductor apparatus includes a semiconductor substrate that has a first surface and a second surface opposite to each other. The semiconductor apparatus further includes multiple double-sided electrode elements each having a pair of electrodes located respectively on the first and second surfaces of the semiconductor substrate. A current flows between the first and second electrode. Each double-sided electrode element has a PN column region located in the semiconductor substrate. The semiconductor apparatus further includes an insulation trench that surrounds each of multiple double-sided electrode elements, and that insulates and separates the multiple double-sided electrode elements from each other.
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