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发明授权
US07911024B2 Ultra-thin SOI vertical bipolar transistors with an inversion collector on thin-buried oxide (BOX) for low substrate-bias operation and methods thereof 有权
具有用于低衬底偏置操作的薄埋氧化物（BOX）上的反向集电极的超薄SOI垂直双极晶体管及其方法

Ultra-thin SOI vertical bipolar transistors with an inversion collector on thin-buried oxide (BOX) for low substrate-bias operation and methods thereof
摘要：
The present invention provides a “collector-less” silicon-on-insulator (SOI) bipolar junction transistor (BJT) that has no impurity-doped collector. Instead, the inventive vertical SOI BJT uses a back gate-induced, minority carrier inversion layer as the intrinsic collector when it operates. In accordance with the present invention, the SOI substrate is biased such that an inversion layer is formed at the bottom of the base region serving as the collector. The advantage of such a device is its CMOS-like process. Therefore, the integration scheme can be simplified and the manufacturing cost can be significantly reduced. The present invention also provides a method of fabricating BJTs on selected areas of a very thin BOX using a conventional SOI starting wafer with a thick BOX. The reduced BOX thickness underneath the bipolar devices allows for a significantly reduced substrate bias compatible with the CMOS to be applied while maintaining the advantages of a thick BOX underneath the CMOS.
摘要（中）：

本发明提供一种没有杂质掺杂的集电极的“无集电极”绝缘体上硅（SOI）双极结型晶体管（BJT）。 相反，本发明的垂直SOI BJT在其操作时使用背栅诱发的少数载流子反转层作为固有收集器。 根据本发明，SOI衬底被偏置，使得在用作集电极的基极区域的底部形成反型层。 这种器件的优点是其类似CMOS的工艺。 因此，可以简化集成方案，并且可以显着降低制造成本。 本发明还提供了使用具有厚BOX的常规SOI起始晶片在非常薄的BOX的选定区域上制造BJT的方法。 双极器件下面的BOX厚度减小，可以显着降低与CMOS相容的衬底偏置，同时保持CMOS下方的厚BOX的优点。

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