发明授权
US07911855B2 Semiconductor device with voltage interconnections 有权
具有电压互连的半导体器件

  • 专利标题: Semiconductor device with voltage interconnections
  • 专利标题(中): 具有电压互连的半导体器件
  • 申请号: US12280074
    申请日: 2007-02-22
  • 公开(公告)号: US07911855B2
    公开(公告)日: 2011-03-22
  • 发明人: Akira Tada
  • 申请人: Akira Tada
  • 申请人地址: JP Tokyo
  • 专利权人: Renesas Technology Corp.
  • 当前专利权人: Renesas Technology Corp.
  • 当前专利权人地址: JP Tokyo
  • 代理机构: McDermott Will & Emery LLP
  • 优先权: JP2006-048763 20060224
  • 国际申请: PCT/JP2007/053252 WO 20070222
  • 国际公布: WO2007/099841 WO 20070907
  • 主分类号: G11C7/00
  • IPC分类号: G11C7/00
Semiconductor device with voltage interconnections
摘要:
A semiconductor device capable of reducing power consumption is provided. When a power to an internal circuit is interrupted, e.g., in a standby mode, a switch is turned off, and a pseudo-ground line is charged with a leak current of the internal circuit to raise a potential thereof. After the switch is turned off, a switch connected to a charge supply unit is turned on while the potential is rising, so that the charge supply unit is electrically coupled to the pseudo-ground line. Thereby, charges accumulated in the charge supply unit are discharged to the pseudo-ground line. The switch is turned off to decouple electrically the charge supply unit from the pseudo-ground line. Thereby, when the power supply is interrupted, a part of the charges for raising the potential of the pseudo-ground line is supplemented with the charges of the charge supply unit.
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