Invention Grant
- Patent Title: Memory macro with irregular edge cells
- Patent Title (中): 具有不规则边缘单元格的内存宏
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Application No.: US11493405Application Date: 2006-07-26
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Publication No.: US07913215B2Publication Date: 2011-03-22
- Inventor: Chung-Cheng Chou , Cheng-Hung Lee
- Applicant: Chung-Cheng Chou , Cheng-Hung Lee
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: K&L Gates LLP
- Main IPC: G06F17/50
- IPC: G06F17/50
Abstract:
A memory macro includes a first set of cells disposed in a first area of a memory array, and a second set of cells, which differ from the first set of cells in physical dimensions, disposed at an edge of the first area for improving robustness of the cells at the edge of the memory array.
Public/Granted literature
- US20080028351A1 Memory macro with irregular edge cells Public/Granted day:2008-01-31
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