发明授权
- 专利标题: Method for patterning a metal gate
- 专利标题(中): 图案化金属栅极的方法
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申请号: US12431838申请日: 2009-04-29
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公开(公告)号: US07915105B2公开(公告)日: 2011-03-29
- 发明人: Matt Yeh , Shun Wu Lin , Chung-Ming Wang , Chi-Chun Chen
- 申请人: Matt Yeh , Shun Wu Lin , Chung-Ming Wang , Chi-Chun Chen
- 申请人地址: TW Hsin-Chu
- 专利权人: Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人: Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址: TW Hsin-Chu
- 代理机构: Haynes and Boone, LLP
- 主分类号: H01L21/338
- IPC分类号: H01L21/338 ; H01L21/8234 ; H01L21/336
摘要:
The present disclosure provides a method for fabricating a semiconductor device. The method includes forming first, second, third, and fourth gate structures on a semiconductor substrate, each gate structure having a dummy gate, removing the dummy gate from the first, second, third, and fourth gate structures, thereby forming first, second, third, and fourth trenches, respectively, forming a metal layer to partially fill in the first, second, third, and fourth trenches, forming a first photoresist layer over the first, second, and third trenches, etching a portion of the metal layer in the fourth trench, removing the first photoresist layer, forming a second photoresist layer over the second and third trenches, etching the metal layer in the first trench and the remaining portion of the metal layer in the fourth trench, and removing the second photoresist layer.
公开/授权文献
- US20100112811A1 METHOD FOR PATTERNING A METAL GATE 公开/授权日:2010-05-06