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发明授权
US07915167B2 Fabrication of channel wraparound gate structure for field-effect transistor 有权
场效应晶体管通道环绕栅结构的制作

Fabrication of channel wraparound gate structure for field-effect transistor
摘要：
A method for fabricating a field-effect transistor with a gate completely wrapping around a channel region is described. Ion implantation is used to make the oxide beneath the channel region of the transistor more etchable, thereby allowing the oxide to be removed below the channel region. Atomic layer deposition is used to form a gate dielectric and a metal gate entirely around the channel region once the oxide is removed below the channel region.
摘要（中）：

描述了一种制造具有完全围绕通道区域的栅极的场效应晶体管的方法。 离子注入用于使晶体管的沟道区下方的氧化物更易蚀刻，从而允许氧化物在沟道区下方被去除。 一旦氧化物在通道区域下方被去除，原子层沉积被用于在通道区域的整个周围形成栅极电介质和金属栅极。

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