Invention Grant
- Patent Title: Diode having vertical structure and method of manufacturing the same
- Patent Title (中): 具有垂直结构的二极管及其制造方法
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Application No.: US12840840Application Date: 2010-07-21
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Publication No.: US07915632B2Publication Date: 2011-03-29
- Inventor: Myung Cheol Yoo
- Applicant: Myung Cheol Yoo
- Applicant Address: KR Seoul
- Assignee: LG Electronics Inc.
- Current Assignee: LG Electronics Inc.
- Current Assignee Address: KR Seoul
- Agency: McKenna Long & Aldridge LLP
- Main IPC: H01L33/00
- IPC: H01L33/00
Abstract:
A light emitting diode includes a conductive layer, an n-GaN layer on the conductive layer, an active layer on the n-GaN layer, a p-GaN layer on the active layer, and a p-electrode on the p-GaN layer. The conductive layer is an n-electrode.
Public/Granted literature
- US20100314607A1 DIODE HAVING VERTICAL STRUCTURE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2010-12-16
Information query
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