发明授权
US07915642B2 Apparatus and methods for forming a modulation doped non-planar transistor
有权
用于形成调制掺杂非平面晶体管的装置和方法
- 专利标题: Apparatus and methods for forming a modulation doped non-planar transistor
- 专利标题(中): 用于形成调制掺杂非平面晶体管的装置和方法
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申请号: US12319097申请日: 2008-12-30
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公开(公告)号: US07915642B2公开(公告)日: 2011-03-29
- 发明人: Ravi Pillarisetty , Mantu Hudait , Marko Radosavljevic , Willy Rachmady , Gilbert Dewey , Jack Kavalieros
- 申请人: Ravi Pillarisetty , Mantu Hudait , Marko Radosavljevic , Willy Rachmady , Gilbert Dewey , Jack Kavalieros
- 申请人地址: US CA Santa Clara
- 专利权人: Intel Corporation
- 当前专利权人: Intel Corporation
- 当前专利权人地址: US CA Santa Clara
- 代理商 Scott M. Lane
- 主分类号: H01L29/778
- IPC分类号: H01L29/778
摘要:
Embodiments of an apparatus and methods for providing three-dimensional complementary metal oxide semiconductor devices comprising modulation doped transistors are generally described herein. Other embodiments may be described and claimed.