发明授权
- 专利标题： Semiconductor memory device
- 专利标题（中）： 半导体存储器件
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申请号： US12400262申请日： 2009-03-09
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公开(公告)号： US07916522B2公开(公告)日： 2011-03-29
- 发明人: Kiyotaro Itagaki , Tsuneo Inaba , Yoshihiro Ueda , Yoshiaki Asao
- 申请人： Kiyotaro Itagaki , Tsuneo Inaba , Yoshihiro Ueda , Yoshiaki Asao
- 申请人地址： JP Tokyo
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JP Tokyo
- 代理机构： Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- 优先权： JP2008-105081 20080414
- 主分类号： G11C11/15
- IPC分类号： G11C11/15
摘要：
A semiconductor memory device includes n resistance change elements which are arranged in one cell, have a low-resistance state and a high resistance state, are connected in series or parallel, have different resistance values in the same resistance state, and change between the low-resistance state and the high-resistance state under different conditions, and a write circuit which is connected to one end of the n resistance change elements, and applies a pulse current m (1≦m≦n) times to the n resistance change elements during a write operation. Letting Im be a current value of an mth pulse current, condition I1>I2> . . . >Im holds.
公开/授权文献
- US20090257274A1 SEMICONDUCTOR MEMORY DEVICE 公开/授权日：2009-10-15