发明授权
US07919400B2 Methods for doping nanostructured materials and nanostructured thin films
有权
掺杂纳米结构材料和纳米结构薄膜的方法
- 专利标题: Methods for doping nanostructured materials and nanostructured thin films
- 专利标题(中): 掺杂纳米结构材料和纳米结构薄膜的方法
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申请号: US12163443申请日: 2008-06-27
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公开(公告)号: US07919400B2公开(公告)日: 2011-04-05
- 发明人: Howard W. H. Lee
- 申请人: Howard W. H. Lee
- 申请人地址: US CA San Jose
- 专利权人: Stion Corporation
- 当前专利权人: Stion Corporation
- 当前专利权人地址: US CA San Jose
- 代理机构: Kilpatrick Townsend & Stockton LLP
- 主分类号: H01L21/04
- IPC分类号: H01L21/04
摘要:
A method for introducing one or more impurities into nano-structured materials. The method includes providing a nanostructured material having a feature size of about 100 nm and less. The method includes subjecting a surface region of the nanostructured material to one or more impurities to form a first region having a first impurity concentration within a vicinity of the surface region. In a specific embodiment, the method includes applying a driving force to one or more portions of at least the nanostructured material to cause the first region to form a second region having a second impurity concentration.
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