Invention Grant
US07919775B2 Semiconductor device and method comprising a high voltage reset driver and an isolated memory array
有权
半导体器件和方法包括高电压复位驱动器和隔离存储器阵列
- Patent Title: Semiconductor device and method comprising a high voltage reset driver and an isolated memory array
- Patent Title (中): 半导体器件和方法包括高电压复位驱动器和隔离存储器阵列
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Application No.: US12472913Application Date: 2009-05-27
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Publication No.: US07919775B2Publication Date: 2011-04-05
- Inventor: James D. Huffman , James N. Hall
- Applicant: James D. Huffman , James N. Hall
- Applicant Address: US TX Dallas
- Assignee: Texas Instruments Incorporated
- Current Assignee: Texas Instruments Incorporated
- Current Assignee Address: US TX Dallas
- Agent Charles A. Brill; Wade James Brady, III; Frederick J. Telecky, Jr.
- Main IPC: H01L23/58
- IPC: H01L23/58
Abstract:
A method of operating a semiconductor device, a semiconductor device and a digital micromirror system are presented. In an embodiment, the semiconductor device comprises a grounded substrate, a memory array, and a reset driver. The memory array may be isolated from the grounded substrate with a buried layer. The set of voltages of the memory array may be shifted with respect to a reset voltage. The reset driver may drive the reset voltage and the reset driver may have at least one extended drain transistor in the grounded substrate.
Public/Granted literature
- US20090231932A1 Semiconductor Device and Method Comprising a High Voltage Reset Driver and an Isolated Memory Array Public/Granted day:2009-09-17
Information query
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