发明授权
- 专利标题： Stack resistor structure for integrated circuits
- 专利标题（中）： 集成电路的堆叠电阻结构
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申请号： US11652895申请日： 2007-01-11
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公开(公告)号： US07919832B2公开(公告)日： 2011-04-05
- 发明人: Fu-Lung Hsueh , Sung-Chieh Lin
- 申请人： Fu-Lung Hsueh , Sung-Chieh Lin
- 申请人地址： TW Hsin-Chu
- 专利权人： Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人地址： TW Hsin-Chu
- 代理机构： K&L Gates LLP
- 主分类号： H01L29/06
- IPC分类号： H01L29/06
摘要：
A resistor structure for an integrated circuit includes a first set of contacts connected between a semiconductor layer and a first conductive layer; and a second set of plugs connected between the first conductive layer and a second conductive layer, wherein the first set of contacts and the second set of plugs are coupled together as a first resistor segment to provide a predetermined resistance for the integrated circuit.
公开/授权文献
- US20080169514A1 Stack resistor structure for integrated circuits 公开/授权日：2008-07-17