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发明授权
US07919864B2 Forming of the last metallization level of an integrated circuit 有权
形成集成电路的最后一个金属化水平

Forming of the last metallization level of an integrated circuit
摘要：
An integrated circuit including one or several metallization levels, metal conductive strips and metal contact pads being formed on the last metallization level, the last level being covered with a passivation layer in which are formed openings above the contact pads. The thickness of the pads, at least at the level of their portions not covered by the passivation layer, is smaller than the thickness of said conductive strips.
摘要（中）：

包括一个或几个金属化水平的集成电路，金属导电条和金属接触焊盘在最后的金属化水平上形成，最后一个层被钝化层覆盖，其中在接触焊盘上形成开口。 至少在其未被钝化层覆盖的部分的水平面上的焊盘的厚度小于所述导电条的厚度。

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