Invention Grant
- Patent Title: Core-shell-shell nanowire transistor and fabrication method
- Patent Title (中): 核壳壳纳米线晶体管及其制造方法
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Application No.: US11779220Application Date: 2007-07-17
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Publication No.: US07923310B2Publication Date: 2011-04-12
- Inventor: Mark A. Crowder , Yutaka Takafuji
- Applicant: Mark A. Crowder , Yutaka Takafuji
- Applicant Address: US WA Camas
- Assignee: Sharp Laboratories of America, Inc.
- Current Assignee: Sharp Laboratories of America, Inc.
- Current Assignee Address: US WA Camas
- Agency: Law Office of Gerald Maliszewski
- Agent Gerald Maliszewski
- Main IPC: H01L21/00
- IPC: H01L21/00

Abstract:
A fabrication method is provided for a core-shell-shell (CSS) nanowire transistor (NWT). The method provides a cylindrical CSS nanostructure with a semiconductor core, an insulator shell, and a conductive shell. The CSS nanostructure has a lower hemicylinder overlying a substrate surface. A first insulating film is conformally deposited overlying the CSS nanostructure and anisotropically plasma etched. Insulating reentrant stringers are formed adjacent the nanostructure lower hemicylinder. A conductive film is conformally deposited and selected regions are anisotropically plasma etched, forming conductive film gate straps overlying a gate electrode in a center section of the CSS nanostructure. An isotropically etching removes the insulating reentrant stringers adjacent the center section of the CSS nanostructure, and an isotropically etching of the conductive shell overlying the S/D regions is performed. A screen oxide layer is deposited over the CSS nanostructure. The source/drain (S/D) regions in end sections of the CS nanostructure flanking are doped.
Public/Granted literature
- US20100252813A1 Core-Shell-Shell Nanowire Transistor And Fabrication Method Public/Granted day:2010-10-07
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