Invention Grant
- Patent Title: Methods for depositing a microcrystalline silicon film for a photovoltaic device
- Patent Title (中): 用于沉积光伏器件的微晶硅膜的方法
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Application No.: US12563837Application Date: 2009-09-21
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Publication No.: US07923354B2Publication Date: 2011-04-12
- Inventor: Soo Young Choi , Takako Takehara , John M. White , Yong Kee Chae
- Applicant: Soo Young Choi , Takako Takehara , John M. White , Yong Kee Chae
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Patterson & Sheridan, LLP
- Main IPC: H01L21/20
- IPC: H01L21/20 ; H01L21/36
Abstract:
Methods for depositing a microcrystalline silicon film layer with improved deposition rate and film quality are provided in the present invention. Also, a photovoltaic (PV) cell having a microcrystalline silicon film is provided. In one embodiment, the method produces a microcrystalline silicon film on a substrate at a deposition rate greater than about 20 nm per minute, wherein the microcrystalline silicon film has a crystallized volume between about 20 percent to about 80 percent.
Public/Granted literature
- US20100003780A1 METHODS AND APPARATUS FOR DEPOSITING A MICROCRYSTALLINE SILICON FILM FOR PHOTOVOLTAIC DEVICE Public/Granted day:2010-01-07
Information query
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