Plasma enhanced chemical vapor deposition technology for large-size processing
    10.
    发明授权
    Plasma enhanced chemical vapor deposition technology for large-size processing 有权
    用于大尺寸加工的等离子体增强化学气相沉积技术

    公开(公告)号:US08114484B2

    公开(公告)日:2012-02-14

    申请号:US11833983

    申请日:2007-08-04

    IPC分类号: H01H1/24 C23C16/00

    摘要: Methods for forming a film stack suitable for transistor fabrication using a low temperature plasma enhanced chemical vapor deposition (PECVD) process are provided. In one embodiment, the method includes providing a substrate in a PECVD chamber, depositing a dual layer SiNx film on the substrate, depositing a dual layer amorphous silicon film on the SiNx film, and depositing a n-doped silicon film on the dual layer amorphous silicon film. The aforementioned films are deposited at a temperature less than about 300 degrees Celsius in the same PECVD chamber.

    摘要翻译: 提供了使用低温等离子体增强化学气相沉积(PECVD)工艺形成适用于晶体管制造的膜堆叠的方法。 在一个实施例中,该方法包括在PECVD室中提供衬底,在衬底上沉积双层SiNx膜,在SiNx膜上沉积双层非晶硅膜,以及在双层非晶体上沉积n掺杂硅膜 硅膜。 上述膜在相同的PECVD室中以低于约300摄氏度的温度沉积。