Invention Grant
- Patent Title: Method and apparatus for treating a semi-conductor substrate
- Patent Title (中): 用于处理半导体基板的方法和装置
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Application No.: US10401184Application Date: 2003-03-28
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Publication No.: US07923383B2Publication Date: 2011-04-12
- Inventor: Knut Beekmann , Guy Patrick Tucker
- Applicant: Knut Beekmann , Guy Patrick Tucker
- Applicant Address: JP Tokyo
- Assignee: Tokyo Electron Limited
- Current Assignee: Tokyo Electron Limited
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Main IPC: H01L21/31
- IPC: H01L21/31
Abstract:
This invention relates to a method of treating a semiconductor wafer and in particular, but not exclusively, to planarisation. The method consists of depositing a liquid short-chain polymer formed from a silicon containing bas or vapour. Subsequently water and OH are removed and the layer is stabilised.
Public/Granted literature
- US20040043631A1 Method and apparatus for treating a semi-conductor substrate Public/Granted day:2004-03-04
Information query
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