Invention Grant
US07923808B2 Structure of very high insertion loss of the substrate noise decoupling
有权
非常高的衬底噪声去耦插入损耗的结构
- Patent Title: Structure of very high insertion loss of the substrate noise decoupling
- Patent Title (中): 非常高的衬底噪声去耦插入损耗的结构
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Application No.: US11942811Application Date: 2007-11-20
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Publication No.: US07923808B2Publication Date: 2011-04-12
- Inventor: Hanyi Ding , Kai D. Feng , Zhong-Xiang He , Xuefeng Liu
- Applicant: Hanyi Ding , Kai D. Feng , Zhong-Xiang He , Xuefeng Liu
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Roberts Mlotkowski Safran & Cole, P.C.
- Agent Anthony Canale
- Main IPC: H01L21/20
- IPC: H01L21/20 ; H01L21/36
Abstract:
A structure includes a substrate comprising a region having a circuit or device which is sensitive to electrical noise. Additionally, the structure includes a first isolation structure extending through an entire thickness of the substrate and surrounding the region and a second isolation structure extending through the entire thickness of the substrate and surrounding the region.
Public/Granted literature
- US20090127652A1 STRUCTURE OF VERY HIGH INSERTION LOSS OF THE SUBSTRATE NOISE DECOUPLING Public/Granted day:2009-05-21
Information query
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