发明授权
- 专利标题: Method for manufacturing field emission electron source
- 专利标题(中): 场致发射电子源的制造方法
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申请号: US11973222申请日: 2007-10-05
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公开(公告)号: US07927652B2公开(公告)日: 2011-04-19
- 发明人: Yang Wei , Lin Xiao , Feng Zhu , Jie Tang , Liang Liu , Shou-Shan Fan
- 申请人: Yang Wei , Lin Xiao , Feng Zhu , Jie Tang , Liang Liu , Shou-Shan Fan
- 申请人地址: CN Beijing TW Tu-Cheng, New Taipei
- 专利权人: Tsinghua University,Hon Hai Precision Industry Co., Ltd.
- 当前专利权人: Tsinghua University,Hon Hai Precision Industry Co., Ltd.
- 当前专利权人地址: CN Beijing TW Tu-Cheng, New Taipei
- 代理商 Jeffrey T. Knapp
- 优先权: CN200610156847 20061115
- 主分类号: H01J1/304
- IPC分类号: H01J1/304 ; H01J1/30 ; H01J1/00
摘要:
A method for manufacturing a field emission electron source, the method comprising the steps of: preparing a substrate, a carbon nanotubes slurry, and a conductive slurry; applying a conductive slurry layer onto the substrate; applying a layer of carbon nanotubes slurry onto the conductive slurry layer; and solidifying the substrate under a temperature of 300 to 600 degrees centigrade so as to form the field emission electron source.
公开/授权文献
- US20080214082A1 Method for manufacturing field emission electron source 公开/授权日:2008-09-04
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